Temperature-Dependent Two-Dimensional Transition Metal Dichalcogenide Heterostructures: Controlled Synthesis and Their Properties

• Published in: ACS applied materials & interfaces Vol. 9; no. 36; pp. 30821 - 30831
• Main Authors: Chen, Fei, Wang, Lei, Ji, Xiaohong, Zhang, Qinyuan
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 13.09.2017
• Subjects: Mo1−x W x S2; growth mechanism; MoS2; magnetron sputtering and CVD synthesis; WS2; two-dimensional semiconductor; 2D heterosructures; Mo1−xWxS2
• DOI: 10.1021/acsami.7b08313
• ISSN: 1944-8244

Vertically stacked and laterally stitched heterostructures consisting of two-dimensional (2D) transition metal dichalcogenides (TMDCs) are predicted to possess novel electronic and optical properties, which offer opportunities for the development of next-generation electronic and optoelectronic devices. In the present work, we report the temperature-dependent synthesis of 2D TMDC heterostructures on Si/SiO2 substrates, including MoS2–WS2, WS2–MoS2–WS2, Mo1–x W x S2–WS2, and Mo1–x W x S2 alloyed bilayer heterostructures by ambient pressure chemical vapor deposition (CVD). Raman and photoluminescence mapping studies demonstrate that the as-produced heterostructures show distinct structural and optical modulation. Our results indicate that the evolution of various 2D heterostructures originates from the competition between the adsorption and desorption of Mo atoms and the diffusion of W atoms under various growth temperatures. This work sheds light on the design and fabrication of heterostructures using controllable interfaces and junctions of diverse TMDC atomic layers.