Defect Engineering in MoSe2 for the Hydrogen Evolution Reaction: From Point Defects to Edges
Superior catalytic activity and high chemical stability of inexpensive electrocatalysts for the hydrogen evolution reaction (HER) are crucial to the large-scale production of hydrogen from water. The nonprecious two-dimensional MoSe2 materials emerge as a potential candidate, and the improvement of...
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Published in | ACS applied materials & interfaces Vol. 9; no. 49; pp. 42688 - 42698 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
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American Chemical Society
13.12.2017
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Abstract | Superior catalytic activity and high chemical stability of inexpensive electrocatalysts for the hydrogen evolution reaction (HER) are crucial to the large-scale production of hydrogen from water. The nonprecious two-dimensional MoSe2 materials emerge as a potential candidate, and the improvement of their catalytic activity depends on the optimization of active reaction sites at both the edges and the basal plane. Herein, the structural stability, electrocatalytic activity, and HER mechanisms on a series of MoSe2 catalytic structures including of point defects, holes, and edges have been explored by using first-principles calculations. Our calculated results demonstrate that thermodynamically stable defects (e.g., VSe, VSe2 , SeMo, and VMo3Se2 ) and edges (e.g., Mo-R and Se-R) in MoSe2 are very similar to the case of MoS2, but their HER activity is higher than that of the corresponding structures in MoS2, which is in good agreement with experimental observations. Furthermore, a Fermi-abundance model is proposed to explain the fundamental correlation between the HER activity of various MoSe2 catalysts and their intrinsic electronic structures, and this model is also applicable for assessing the HER activity of other types of catalysts, such as MoS2 and Pt. Moreover, two different HER mechanisms have been revealed in the MoSe2 catalytic structures: the Volmer–Tafel mechanism is preferred for the VSe and VSe2 structures, whereas the Volmer–Heyrovsky mechanism is more favorable for other MoSe2 catalytic structures. The present work suggests that MoSe2 with appropriate defects and edges is able to compete against the Pt-based catalysts and also opens a route to design highly active electrocatalysts for the HER. |
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AbstractList | Superior catalytic activity and high chemical stability of inexpensive electrocatalysts for the hydrogen evolution reaction (HER) are crucial to the large-scale production of hydrogen from water. The nonprecious two-dimensional MoSe2 materials emerge as a potential candidate, and the improvement of their catalytic activity depends on the optimization of active reaction sites at both the edges and the basal plane. Herein, the structural stability, electrocatalytic activity, and HER mechanisms on a series of MoSe2 catalytic structures including of point defects, holes, and edges have been explored by using first-principles calculations. Our calculated results demonstrate that thermodynamically stable defects (e.g., VSe, VSe2, SeMo, and VMo3Se2) and edges (e.g., Mo-R and Se-R) in MoSe2 are very similar to the case of MoS2, but their HER activity is higher than that of the corresponding structures in MoS2, which is in good agreement with experimental observations. Furthermore, a Fermi-abundance model is proposed to explain the fundamental correlation between the HER activity of various MoSe2 catalysts and their intrinsic electronic structures, and this model is also applicable for assessing the HER activity of other types of catalysts, such as MoS2 and Pt. Moreover, two different HER mechanisms have been revealed in the MoSe2 catalytic structures: the Volmer-Tafel mechanism is preferred for the VSe and VSe2 structures, whereas the Volmer-Heyrovsky mechanism is more favorable for other MoSe2 catalytic structures. The present work suggests that MoSe2 with appropriate defects and edges is able to compete against the Pt-based catalysts and also opens a route to design highly active electrocatalysts for the HER.Superior catalytic activity and high chemical stability of inexpensive electrocatalysts for the hydrogen evolution reaction (HER) are crucial to the large-scale production of hydrogen from water. The nonprecious two-dimensional MoSe2 materials emerge as a potential candidate, and the improvement of their catalytic activity depends on the optimization of active reaction sites at both the edges and the basal plane. Herein, the structural stability, electrocatalytic activity, and HER mechanisms on a series of MoSe2 catalytic structures including of point defects, holes, and edges have been explored by using first-principles calculations. Our calculated results demonstrate that thermodynamically stable defects (e.g., VSe, VSe2, SeMo, and VMo3Se2) and edges (e.g., Mo-R and Se-R) in MoSe2 are very similar to the case of MoS2, but their HER activity is higher than that of the corresponding structures in MoS2, which is in good agreement with experimental observations. Furthermore, a Fermi-abundance model is proposed to explain the fundamental correlation between the HER activity of various MoSe2 catalysts and their intrinsic electronic structures, and this model is also applicable for assessing the HER activity of other types of catalysts, such as MoS2 and Pt. Moreover, two different HER mechanisms have been revealed in the MoSe2 catalytic structures: the Volmer-Tafel mechanism is preferred for the VSe and VSe2 structures, whereas the Volmer-Heyrovsky mechanism is more favorable for other MoSe2 catalytic structures. The present work suggests that MoSe2 with appropriate defects and edges is able to compete against the Pt-based catalysts and also opens a route to design highly active electrocatalysts for the HER. Superior catalytic activity and high chemical stability of inexpensive electrocatalysts for the hydrogen evolution reaction (HER) are crucial to the large-scale production of hydrogen from water. The nonprecious two-dimensional MoSe₂ materials emerge as a potential candidate, and the improvement of their catalytic activity depends on the optimization of active reaction sites at both the edges and the basal plane. Herein, the structural stability, electrocatalytic activity, and HER mechanisms on a series of MoSe₂ catalytic structures including of point defects, holes, and edges have been explored by using first-principles calculations. Our calculated results demonstrate that thermodynamically stable defects (e.g., VSₑ, VSₑ₂, SeMₒ, and VMₒ₃Sₑ₂) and edges (e.g., Mo-R and Se-R) in MoSe₂ are very similar to the case of MoS₂, but their HER activity is higher than that of the corresponding structures in MoS₂, which is in good agreement with experimental observations. Furthermore, a Fermi-abundance model is proposed to explain the fundamental correlation between the HER activity of various MoSe₂ catalysts and their intrinsic electronic structures, and this model is also applicable for assessing the HER activity of other types of catalysts, such as MoS₂ and Pt. Moreover, two different HER mechanisms have been revealed in the MoSe₂ catalytic structures: the Volmer–Tafel mechanism is preferred for the VSₑ and VSₑ₂ structures, whereas the Volmer–Heyrovsky mechanism is more favorable for other MoSe₂ catalytic structures. The present work suggests that MoSe₂ with appropriate defects and edges is able to compete against the Pt-based catalysts and also opens a route to design highly active electrocatalysts for the HER. Superior catalytic activity and high chemical stability of inexpensive electrocatalysts for the hydrogen evolution reaction (HER) are crucial to the large-scale production of hydrogen from water. The nonprecious two-dimensional MoSe2 materials emerge as a potential candidate, and the improvement of their catalytic activity depends on the optimization of active reaction sites at both the edges and the basal plane. Herein, the structural stability, electrocatalytic activity, and HER mechanisms on a series of MoSe2 catalytic structures including of point defects, holes, and edges have been explored by using first-principles calculations. Our calculated results demonstrate that thermodynamically stable defects (e.g., VSe, VSe2 , SeMo, and VMo3Se2 ) and edges (e.g., Mo-R and Se-R) in MoSe2 are very similar to the case of MoS2, but their HER activity is higher than that of the corresponding structures in MoS2, which is in good agreement with experimental observations. Furthermore, a Fermi-abundance model is proposed to explain the fundamental correlation between the HER activity of various MoSe2 catalysts and their intrinsic electronic structures, and this model is also applicable for assessing the HER activity of other types of catalysts, such as MoS2 and Pt. Moreover, two different HER mechanisms have been revealed in the MoSe2 catalytic structures: the Volmer–Tafel mechanism is preferred for the VSe and VSe2 structures, whereas the Volmer–Heyrovsky mechanism is more favorable for other MoSe2 catalytic structures. The present work suggests that MoSe2 with appropriate defects and edges is able to compete against the Pt-based catalysts and also opens a route to design highly active electrocatalysts for the HER. |
Author | Li, Feng Chen, Xiaoshuang Cao, Dan Shu, Haibo Zhou, Dong |
AuthorAffiliation | Shanghai Institute of Technical Physics, Chinese Academy of Science National Laboratory for Infrared Physics College of Optical and Electronic Technology College of Science |
AuthorAffiliation_xml | – name: College of Optical and Electronic Technology – name: College of Science – name: Shanghai Institute of Technical Physics, Chinese Academy of Science – name: National Laboratory for Infrared Physics |
Author_xml | – sequence: 1 givenname: Haibo orcidid: 0000-0003-1728-2190 surname: Shu fullname: Shu, Haibo email: shu123hb@gmail.com organization: Shanghai Institute of Technical Physics, Chinese Academy of Science – sequence: 2 givenname: Dong surname: Zhou fullname: Zhou, Dong – sequence: 3 givenname: Feng surname: Li fullname: Li, Feng – sequence: 4 givenname: Dan surname: Cao fullname: Cao, Dan – sequence: 5 givenname: Xiaoshuang surname: Chen fullname: Chen, Xiaoshuang organization: Shanghai Institute of Technical Physics, Chinese Academy of Science |
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Title | Defect Engineering in MoSe2 for the Hydrogen Evolution Reaction: From Point Defects to Edges |
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