Life on the Urbach Edge
The Urbach energy is an expression of the static and dynamic disorder in a semiconductor and is directly accessible via optical characterization techniques. The strength of this metric is that it elegantly captures the optoelectronic performance potential of a semiconductor in a single number. For s...
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| Published in | The journal of physical chemistry letters Vol. 13; no. 33; pp. 7702 - 7711 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
American Chemical Society
25.08.2022
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| Online Access | Get full text |
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| Abstract | The Urbach energy is an expression of the static and dynamic disorder in a semiconductor and is directly accessible via optical characterization techniques. The strength of this metric is that it elegantly captures the optoelectronic performance potential of a semiconductor in a single number. For solar cells, the Urbach energy is found to be predictive of a material’s minimal open-circuit-voltage deficit. Performance calculations considering the Urbach energy give more realistic power conversion efficiency limits than from classical Shockley–Queisser considerations. The Urbach energy is often also found to correlate well with the Stokes shift and (inversely) with the carrier mobility of a semiconductor. Here, we discuss key features, underlying physics, measurement techniques, and implications for device fabrication, underlining the utility of this metric. |
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| AbstractList | The Urbach energy is an expression of the static and dynamic disorder in a semiconductor and is directly accessible via optical characterization techniques. The strength of this metric is that it elegantly captures the optoelectronic performance potential of a semiconductor in a single number. For solar cells, the Urbach energy is found to be predictive of a material’s minimal open-circuit-voltage deficit. Performance calculations considering the Urbach energy give more realistic power conversion efficiency limits than from classical Shockley–Queisser considerations. The Urbach energy is often also found to correlate well with the Stokes shift and (inversely) with the carrier mobility of a semiconductor. Here, we discuss key features, underlying physics, measurement techniques, and implications for device fabrication, underlining the utility of this metric. The Urbach energy is an expression of the static and dynamic disorder in a semiconductor and is directly accessible via optical characterization techniques. The strength of this metric is that it elegantly captures the optoelectronic performance potential of a semiconductor in a single number. For solar cells, the Urbach energy is found to be predictive of a material's minimal open-circuit-voltage deficit. Performance calculations considering the Urbach energy give more realistic power conversion efficiency limits than from classical Shockley-Queisser considerations. The Urbach energy is often also found to correlate well with the Stokes shift and (inversely) with the carrier mobility of a semiconductor. Here, we discuss key features, underlying physics, measurement techniques, and implications for device fabrication, underlining the utility of this metric.The Urbach energy is an expression of the static and dynamic disorder in a semiconductor and is directly accessible via optical characterization techniques. The strength of this metric is that it elegantly captures the optoelectronic performance potential of a semiconductor in a single number. For solar cells, the Urbach energy is found to be predictive of a material's minimal open-circuit-voltage deficit. Performance calculations considering the Urbach energy give more realistic power conversion efficiency limits than from classical Shockley-Queisser considerations. The Urbach energy is often also found to correlate well with the Stokes shift and (inversely) with the carrier mobility of a semiconductor. Here, we discuss key features, underlying physics, measurement techniques, and implications for device fabrication, underlining the utility of this metric. |
| Author | Holovský, Jakub Ugur, Esma Allen, Thomas G. Ledinský, Martin De Wolf, Stefaan Vlk, Ales |
| AuthorAffiliation | KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE) Faculty of Electrical Engineering Centre for Advanced Photovoltaics, Czech Technical University in Prague Laboratory of Nanostructures and Nanomaterials, Institute of Physics |
| AuthorAffiliation_xml | – name: KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE) – name: Centre for Advanced Photovoltaics, Czech Technical University in Prague – name: Laboratory of Nanostructures and Nanomaterials, Institute of Physics – name: Faculty of Electrical Engineering |
| Author_xml | – sequence: 1 givenname: Esma orcidid: 0000-0003-0070-334X surname: Ugur fullname: Ugur, Esma organization: KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE) – sequence: 2 givenname: Martin orcidid: 0000-0002-6586-5473 surname: Ledinský fullname: Ledinský, Martin organization: Laboratory of Nanostructures and Nanomaterials, Institute of Physics – sequence: 3 givenname: Thomas G. surname: Allen fullname: Allen, Thomas G. organization: KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE) – sequence: 4 givenname: Jakub surname: Holovský fullname: Holovský, Jakub organization: Faculty of Electrical Engineering – sequence: 5 givenname: Aleš orcidid: 0000-0003-2866-7133 surname: Vlk fullname: Vlk, Aleš organization: Laboratory of Nanostructures and Nanomaterials, Institute of Physics – sequence: 6 givenname: Stefaan orcidid: 0000-0003-1619-9061 surname: De Wolf fullname: De Wolf, Stefaan email: stefaan.dewolf@kaust.edu.sa organization: KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE) |
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