Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation
We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (V d). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities...
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| Published in | Nano letters Vol. 15; no. 8; pp. 5052 - 5058 |
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| Main Authors | , , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
American Chemical Society
12.08.2015
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1530-6984 1530-6992 1530-6992 |
| DOI | 10.1021/acs.nanolett.5b01159 |
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| Abstract | We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (V d). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current–voltage characteristics exhibit variable range hopping at low V d and evidence of velocity saturation at higher V d. This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action. |
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| AbstractList | We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (V d). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current–voltage characteristics exhibit variable range hopping at low V d and evidence of velocity saturation at higher V d. This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action. We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (Vd). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current-voltage characteristics exhibit variable range hopping at low Vd and evidence of velocity saturation at higher Vd. This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action. We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (Vd). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current-voltage characteristics exhibit variable range hopping at low Vd and evidence of velocity saturation at higher Vd. This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action.We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (Vd). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current-voltage characteristics exhibit variable range hopping at low Vd and evidence of velocity saturation at higher Vd. This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action. |
| Author | Bohra, G Gong, Y Najmaei, S Somphonsane, R Zhang, X Ramamoorthy, H Bird, J. P He, G Singisetti, U Matsunaga, M Ajayan, P. M Vajtai, R Ghosh, K Higuchi, A Aoki, N |
| AuthorAffiliation | Department of Materials Science and NanoEngineering Graduate School of Advanced Integration Science University at Buffalo, The State University of New York Department of Electrical Engineering Rice University King Mongkut’s Institute of Technology Ladkrabang Chiba University Department of Physics |
| AuthorAffiliation_xml | – name: Graduate School of Advanced Integration Science – name: University at Buffalo, The State University of New York – name: King Mongkut’s Institute of Technology Ladkrabang – name: Department of Materials Science and NanoEngineering – name: Chiba University – name: Department of Physics – name: Department of Electrical Engineering – name: Rice University |
| Author_xml | – sequence: 1 givenname: G surname: He fullname: He, G organization: University at Buffalo, The State University of New York – sequence: 2 givenname: K surname: Ghosh fullname: Ghosh, K organization: University at Buffalo, The State University of New York – sequence: 3 givenname: U surname: Singisetti fullname: Singisetti, U organization: University at Buffalo, The State University of New York – sequence: 4 givenname: H surname: Ramamoorthy fullname: Ramamoorthy, H organization: University at Buffalo, The State University of New York – sequence: 5 givenname: R surname: Somphonsane fullname: Somphonsane, R organization: King Mongkut’s Institute of Technology Ladkrabang – sequence: 6 givenname: G surname: Bohra fullname: Bohra, G organization: University at Buffalo, The State University of New York – sequence: 7 givenname: M surname: Matsunaga fullname: Matsunaga, M organization: Chiba University – sequence: 8 givenname: A surname: Higuchi fullname: Higuchi, A organization: Chiba University – sequence: 9 givenname: N surname: Aoki fullname: Aoki, N organization: Chiba University – sequence: 10 givenname: S surname: Najmaei fullname: Najmaei, S organization: Rice University – sequence: 11 givenname: Y surname: Gong fullname: Gong, Y organization: Rice University – sequence: 12 givenname: X surname: Zhang fullname: Zhang, X organization: Rice University – sequence: 13 givenname: R surname: Vajtai fullname: Vajtai, R organization: Rice University – sequence: 14 givenname: P. M surname: Ajayan fullname: Ajayan, P. M organization: Rice University – sequence: 15 givenname: J. P surname: Bird fullname: Bird, J. P email: jbird@buffalo.edu organization: University at Buffalo, The State University of New York |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/26121164$$D View this record in MEDLINE/PubMed |
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| Keywords | Molybdenum disulfide transition metal dichalcogenides velocity saturation 2D transistors high-field transport |
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| Snippet | We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (V... We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages... |
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| SubjectTerms | Crystallization Disulfides - chemistry Electric Conductivity Equipment Design Models, Molecular Molybdenum - chemistry Transistors, Electronic |
| Title | Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation |
| URI | http://dx.doi.org/10.1021/acs.nanolett.5b01159 https://www.ncbi.nlm.nih.gov/pubmed/26121164 https://www.proquest.com/docview/1703717760 |
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