Soluble Fullerene-Based n-Channel Organic Thin-Film Transistors Printed by Using a Polydimethylsiloxane Stamp

• Published in: ACS applied materials & interfaces Vol. 3; no. 3; pp. 836 - 841
• Main Authors: Horii, Yoshinori, Ikawa, Mitsuhiro, Chikamatsu, Masayuki, Azumi, Reiko, Kitagawa, Masahiko, Konishi, Hisatoshi, Yase, Kiyoshi
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 23.03.2011
• Subjects: Crystallization - methods; Dimethylpolysiloxanes - chemistry; Equipment Design; Equipment Failure Analysis; Fullerenes - chemistry; Materials Testing; Membranes, Artificial; Nanotechnology - methods; Organic Chemicals - chemistry; Solubility; Surface Properties; Transistors, Electronic; organic field-effect transistor; transfer printing; polydimethylsiloxane stamp; self-assembled monolayer; complementary inverter; n-channel material; soluble fullerene derivative; organic semiconductor

A polydimethylsiloxane stamp was applied for the first time to the fabrication of n-channel thin-film transistors based on soluble small molecule organic semiconducting materials. The stamping method was found to facilitate film transfer onto a gate insulator surface irrespective of its surface free...