Pressure-Induced Amorphization in Single-Crystal Ta2O5 Nanowires: A Kinetic Mechanism and Improved Electrical Conductivity
Pressure-induced amorphization (PIA) in single-crystal Ta2O5 nanowires is observed at 19 GPa, and the obtained amorphous Ta2O5 nanowires show significant improvement in electrical conductivity. The phase transition process is unveiled by monitoring structural evolution with in situ synchrotron X-ray...
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Published in | Journal of the American Chemical Society Vol. 135; no. 37; pp. 13947 - 13953 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
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United States
American Chemical Society
18.09.2013
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Abstract | Pressure-induced amorphization (PIA) in single-crystal Ta2O5 nanowires is observed at 19 GPa, and the obtained amorphous Ta2O5 nanowires show significant improvement in electrical conductivity. The phase transition process is unveiled by monitoring structural evolution with in situ synchrotron X-ray diffraction, pair distribution function, Raman spectroscopy, and transmission electron microscopy. The first principles calculations reveal the phonon modes softening during compression at particular bonds, and the analysis on the electron localization function also shows bond strength weakening at the same positions. On the basis of the experimental and theoretical results, a kinetic PIA mechanism is proposed and demonstrated systematically that amorphization is initiated by the disruption of connectivity between polyhedra (TaO6 octahedra or TaO7 bipyramids) at the particular weak-bonding positions along the a axis in the unit cell. The one-dimensional morphology is well-preserved for the pressure-induced amorphous Ta2O5, and the electrical conductivity is improved by an order of magnitude compared to traditional amorphous forms. Such pressure-induced amorphous nanomaterials with unique properties surpassing those in either crystalline or conventional amorphous phases hold great promise for numerous applications in the future. |
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AbstractList | Pressure-induced amorphization (PIA) in single-crystal Ta₂O₅ nanowires is observed at 19 GPa, and the obtained amorphous Ta₂O₅ nanowires show significant improvement in electrical conductivity. The phase transition process is unveiled by monitoring structural evolution with in situ synchrotron X-ray diffraction, pair distribution function, Raman spectroscopy, and transmission electron microscopy. The first principles calculations reveal the phonon modes softening during compression at particular bonds, and the analysis on the electron localization function also shows bond strength weakening at the same positions. On the basis of the experimental and theoretical results, a kinetic PIA mechanism is proposed and demonstrated systematically that amorphization is initiated by the disruption of connectivity between polyhedra (TaO₆ octahedra or TaO₇ bipyramids) at the particular weak-bonding positions along the a axis in the unit cell. The one-dimensional morphology is well-preserved for the pressure-induced amorphous Ta₂O₅, and the electrical conductivity is improved by an order of magnitude compared to traditional amorphous forms. Such pressure-induced amorphous nanomaterials with unique properties surpassing those in either crystalline or conventional amorphous phases hold great promise for numerous applications in the future. Pressure-induced amorphization (PIA) in single-crystal Ta2O5 nanowires is observed at 19 GPa, and the obtained amorphous Ta2O5 nanowires show significant improvement in electrical conductivity. The phase transition process is unveiled by monitoring structural evolution with in situ synchrotron X-ray diffraction, pair distribution function, Raman spectroscopy, and transmission electron microscopy. The first principles calculations reveal the phonon modes softening during compression at particular bonds, and the analysis on the electron localization function also shows bond strength weakening at the same positions. On the basis of the experimental and theoretical results, a kinetic PIA mechanism is proposed and demonstrated systematically that amorphization is initiated by the disruption of connectivity between polyhedra (TaO6 octahedra or TaO7 bipyramids) at the particular weak-bonding positions along the a axis in the unit cell. The one-dimensional morphology is well-preserved for the pressure-induced amorphous Ta2O5, and the electrical conductivity is improved by an order of magnitude compared to traditional amorphous forms. Such pressure-induced amorphous nanomaterials with unique properties surpassing those in either crystalline or conventional amorphous phases hold great promise for numerous applications in the future. Pressure-induced amorphization (PIA) in single-crystal Ta2O5 nanowires is observed at 19 GPa, and the obtained amorphous Ta2O5 nanowires show significant improvement in electrical conductivity. The phase transition process is unveiled by monitoring structural evolution with in situ synchrotron X-ray diffraction, pair distribution function, Raman spectroscopy, and transmission electron microscopy. The first principles calculations reveal the phonon modes softening during compression at particular bonds, and the analysis on the electron localization function also shows bond strength weakening at the same positions. On the basis of the experimental and theoretical results, a kinetic PIA mechanism is proposed and demonstrated systematically that amorphization is initiated by the disruption of connectivity between polyhedra (TaO6 octahedra or TaO7 bipyramids) at the particular weak-bonding positions along the a axis in the unit cell. The one-dimensional morphology is well-preserved for the pressure-induced amorphous Ta2O5, and the electrical conductivity is improved by an order of magnitude compared to traditional amorphous forms. Such pressure-induced amorphous nanomaterials with unique properties surpassing those in either crystalline or conventional amorphous phases hold great promise for numerous applications in the future.Pressure-induced amorphization (PIA) in single-crystal Ta2O5 nanowires is observed at 19 GPa, and the obtained amorphous Ta2O5 nanowires show significant improvement in electrical conductivity. The phase transition process is unveiled by monitoring structural evolution with in situ synchrotron X-ray diffraction, pair distribution function, Raman spectroscopy, and transmission electron microscopy. The first principles calculations reveal the phonon modes softening during compression at particular bonds, and the analysis on the electron localization function also shows bond strength weakening at the same positions. On the basis of the experimental and theoretical results, a kinetic PIA mechanism is proposed and demonstrated systematically that amorphization is initiated by the disruption of connectivity between polyhedra (TaO6 octahedra or TaO7 bipyramids) at the particular weak-bonding positions along the a axis in the unit cell. The one-dimensional morphology is well-preserved for the pressure-induced amorphous Ta2O5, and the electrical conductivity is improved by an order of magnitude compared to traditional amorphous forms. Such pressure-induced amorphous nanomaterials with unique properties surpassing those in either crystalline or conventional amorphous phases hold great promise for numerous applications in the future. |
Author | Bai, Ligang Miller, Dean J Hu, Qingyang Sheng, Howard Huang, Fuqiang Yang, Wenge Wen, Jianguo Lü, Xujie Zhao, Yusheng Wang, Lin |
AuthorAffiliation | University of Nevada Electron Microscopy Center High Pressure Synergetic Consortium, Geophysical Laboratory Chinese Academy of Sciences (CAS) High Pressure Science and Engineering Center Carnegie Institution of Washington School of Physics, Astronomy, and Computational Sciences George Mason University Argonne National Laboratory CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics |
AuthorAffiliation_xml | – name: Electron Microscopy Center – name: CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics – name: High Pressure Synergetic Consortium, Geophysical Laboratory – name: School of Physics, Astronomy, and Computational Sciences – name: Carnegie Institution of Washington – name: Argonne National Laboratory – name: University of Nevada – name: Chinese Academy of Sciences (CAS) – name: High Pressure Science and Engineering Center – name: George Mason University |
Author_xml | – sequence: 1 givenname: Xujie surname: Lü fullname: Lü, Xujie email: xujie@aps.anl.gov – sequence: 2 givenname: Qingyang surname: Hu fullname: Hu, Qingyang – sequence: 3 givenname: Wenge surname: Yang fullname: Yang, Wenge email: wyang@ciw.edu – sequence: 4 givenname: Ligang surname: Bai fullname: Bai, Ligang – sequence: 5 givenname: Howard surname: Sheng fullname: Sheng, Howard – sequence: 6 givenname: Lin surname: Wang fullname: Wang, Lin – sequence: 7 givenname: Fuqiang surname: Huang fullname: Huang, Fuqiang – sequence: 8 givenname: Jianguo surname: Wen fullname: Wen, Jianguo – sequence: 9 givenname: Dean J surname: Miller fullname: Miller, Dean J – sequence: 10 givenname: Yusheng surname: Zhao fullname: Zhao, Yusheng email: yusheng.zhao@unlv.edu |
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Snippet | Pressure-induced amorphization (PIA) in single-crystal Ta2O5 nanowires is observed at 19 GPa, and the obtained amorphous Ta2O5 nanowires show significant... Pressure-induced amorphization (PIA) in single-crystal Ta₂O₅ nanowires is observed at 19 GPa, and the obtained amorphous Ta₂O₅ nanowires show significant... |
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SubjectTerms | electrical conductivity geometry monitoring nanowires phase transition Raman spectroscopy transmission electron microscopy X-ray diffraction |
Title | Pressure-Induced Amorphization in Single-Crystal Ta2O5 Nanowires: A Kinetic Mechanism and Improved Electrical Conductivity |
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