Photocatalytic Facet Selectivity in BiVO4 Nanoparticles: Polaron Electronic Structure and Thermodynamic Stability Considerations for Photocatalysis
Selective charge separation among different crystal facets of a semiconductor is an intriguing phenomenon for which there is no firm and full theoretical foundation currently. In this work, we report on a density functional theory + U characterization of band alignment and electron and hole polaron...
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Published in | Journal of physical chemistry. C Vol. 123; no. 33; pp. 20142 - 20151 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
United States
American Chemical Society
22.08.2019
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Subjects | |
Online Access | Get full text |
ISSN | 1932-7447 1932-7455 1932-7455 |
DOI | 10.1021/acs.jpcc.9b05929 |
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Abstract | Selective charge separation among different crystal facets of a semiconductor is an intriguing phenomenon for which there is no firm and full theoretical foundation currently. In this work, we report on a density functional theory + U characterization of band alignment and electron and hole polaron stabilities among the (010), (110), and (011) facets of bismuth vanadate BiVO4 (BVO). Computation-derived band alignment indicates that the conduction band minima are at nearly the same level among the three facets but that the valence band maxima exhibit a shift. We also modeled electron and hole polarons as localized electrons and holes on vanadium and oxygen, respectively, and determined their relative stabilities from a “bulk” region to a surface region. Calculated stabilities reveal similar stability profiles across the various facets, with electron polarons most stable when localized on subsurface V atoms and hole polarons most stable on surface O atoms. Calculations indicate a small stability preference for electron polarons toward the (011) facet and for hole polarons toward the (110) facet, whereas, experimentally, interfacial reduction is observed to take place selectively on the (010) facet and oxidation on the (110) and (011) facets. Facet selectivity could be occurring on the basis of thermodynamics (electron or holes showing a stronger affinity for some facets over others) or kinetics (electron or hole transport and/or redox processes being more efficient toward/on some facets over others) or a combination of both. This work establishes that thermodynamic stability alone is not responsible for the observed facet selectivity in BVO. Therefore, we surmise that polaron transport kinetics and interfacial redox kinetics are likely to have a role in facet selectivity in BVO. These issues will be the subject of future publications. |
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AbstractList | Selective charge separation among different crystal facets of a semiconductor is an intriguing phenomenon for which there is no firm and full theoretical foundation currently. In this work, we report on a density functional theory + U characterization of band alignment and electron and hole polaron stabilities among the (010), (110), and (011) facets of bismuth vanadate BiVO4 (BVO). Computation-derived band alignment indicates that the conduction band minima are at nearly the same level among the three facets but that the valence band maxima exhibit a shift. We also modeled electron and hole polarons as localized electrons and holes on vanadium and oxygen, respectively, and determined their relative stabilities from a “bulk” region to a surface region. Calculated stabilities reveal similar stability profiles across the various facets, with electron polarons most stable when localized on subsurface V atoms and hole polarons most stable on surface O atoms. Calculations indicate a small stability preference for electron polarons toward the (011) facet and for hole polarons toward the (110) facet, whereas, experimentally, interfacial reduction is observed to take place selectively on the (010) facet and oxidation on the (110) and (011) facets. Facet selectivity could be occurring on the basis of thermodynamics (electron or holes showing a stronger affinity for some facets over others) or kinetics (electron or hole transport and/or redox processes being more efficient toward/on some facets over others) or a combination of both. This work establishes that thermodynamic stability alone is not responsible for the observed facet selectivity in BVO. Therefore, we surmise that polaron transport kinetics and interfacial redox kinetics are likely to have a role in facet selectivity in BVO. These issues will be the subject of future publications. Selective charge separation among different crystal facets of a semiconductor is an intriguing phenomenon for which there is no firm and full theoretical foundation currently. In this work, we report on a density functional theory + U characterization of band alignment and electron and hole polaron stabilities among the (010), (110), and (011) facets of bismuth vanadate BiVO₄ (BVO). Computation-derived band alignment indicates that the conduction band minima are at nearly the same level among the three facets but that the valence band maxima exhibit a shift. We also modeled electron and hole polarons as localized electrons and holes on vanadium and oxygen, respectively, and determined their relative stabilities from a “bulk” region to a surface region. Calculated stabilities reveal similar stability profiles across the various facets, with electron polarons most stable when localized on subsurface V atoms and hole polarons most stable on surface O atoms. Calculations indicate a small stability preference for electron polarons toward the (011) facet and for hole polarons toward the (110) facet, whereas, experimentally, interfacial reduction is observed to take place selectively on the (010) facet and oxidation on the (110) and (011) facets. Facet selectivity could be occurring on the basis of thermodynamics (electron or holes showing a stronger affinity for some facets over others) or kinetics (electron or hole transport and/or redox processes being more efficient toward/on some facets over others) or a combination of both. This work establishes that thermodynamic stability alone is not responsible for the observed facet selectivity in BVO. Therefore, we surmise that polaron transport kinetics and interfacial redox kinetics are likely to have a role in facet selectivity in BVO. These issues will be the subject of future publications. We analyze the stability of electron and hole polarons from bulk to surface in bismuth vanadate. Stabilities are not facet-dependent. Both electron and hole polarons are more stable in the subsurface layers. |
Author | Dupuis, Michel Liu, Taifeng Zhao, Qianyu Li, Can Lyu, Yang |
AuthorAffiliation | Department of Chemical and Biological Engineering Computations and Data-Enabled Science & Engineering Program College of Environment and Chemical Engineering State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy Dalian Institute of Chemical Physics, Chinese Academy of Sciences University at Buffalo, State University of New York National & Local Joint Engineering Research Center for Applied Technology of Hybrid Nanomaterials Henan University Dalian University |
AuthorAffiliation_xml | – name: State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy – name: National & Local Joint Engineering Research Center for Applied Technology of Hybrid Nanomaterials – name: Dalian Institute of Chemical Physics, Chinese Academy of Sciences – name: College of Environment and Chemical Engineering – name: Dalian University – name: Department of Chemical and Biological Engineering – name: University at Buffalo, State University of New York – name: Computations and Data-Enabled Science & Engineering Program – name: Henan University |
Author_xml | – sequence: 1 givenname: Taifeng orcidid: 0000-0002-6869-7022 surname: Liu fullname: Liu, Taifeng email: tfliu@vip.henu.edu.cn organization: Henan University – sequence: 2 givenname: Qianyu surname: Zhao fullname: Zhao, Qianyu organization: Henan University – sequence: 3 givenname: Can orcidid: 0000-0002-9301-7850 surname: Li fullname: Li, Can organization: Dalian Institute of Chemical Physics, Chinese Academy of Sciences – sequence: 4 givenname: Yang surname: Lyu fullname: Lyu, Yang organization: Dalian University – sequence: 5 givenname: Michel orcidid: 0000-0003-4799-3364 surname: Dupuis fullname: Dupuis, Michel email: mdupuis2@buffalo.edu organization: Dalian Institute of Chemical Physics, Chinese Academy of Sciences |
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Snippet | Selective charge separation among different crystal facets of a semiconductor is an intriguing phenomenon for which there is no firm and full theoretical... We analyze the stability of electron and hole polarons from bulk to surface in bismuth vanadate. Stabilities are not facet-dependent. Both electron and hole... |
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SubjectTerms | bismuth charge carrier polarons - stability - semiconductor - computational characterization density functional theory Electrical energy Electronic structure polaron transport electrons Layers MATERIALS SCIENCE nanoparticles oxidation oxygen photocatalysis physical chemistry physiological transport Polaron semiconductors SOLAR ENERGY thermodynamics Thickness Vacuum vanadium |
Title | Photocatalytic Facet Selectivity in BiVO4 Nanoparticles: Polaron Electronic Structure and Thermodynamic Stability Considerations for Photocatalysis |
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