Controlled Synthesis of Pure-Phase GaAs Nanowires through Shear Tension

• Published in: ACS photonics Vol. 8; no. 10; pp. 2889 - 2897
• Main Authors: Kang, Yubin, Na, Guangren, Wang, Dengkui, Tang, Jilong, Zhang, Lijun, Shan, Yabing, Cong, Chunxiao, Wei, Zhipeng, Chen, Rui
• Format: Journal Article
• Language: English
• Published: American Chemical Society 20.10.2021
• Subjects: strain; molecular beam epitaxy; crystal phase; III−V semiconductor nanowire; shear tension

The identical crystal phase is one of the most critical and challenging subjects in the fabrication of low dimensional III–V semiconductors for electronic and optoelectronic applications. The polytype boundaries induced by the coexistence of wurtzite (WZ) and zinc blende (ZB) phases in the nanowire...