InGaN/GaN Nanorod Arrays for a Hybrid Nanolaser
Lasers with small size have demonstrated great potential in numerous applications including communication, optical computing, detection, displays, and optical logic circuits. In this study, hybrid plasmonic nanolasers with metal pad structures based on the InGaN/GaN nanorod are designed and fabricat...
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Published in | ACS applied nano materials Vol. 5; no. 11; pp. 16971 - 16977 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
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American Chemical Society
25.11.2022
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Abstract | Lasers with small size have demonstrated great potential in numerous applications including communication, optical computing, detection, displays, and optical logic circuits. In this study, hybrid plasmonic nanolasers with metal pad structures based on the InGaN/GaN nanorod are designed and fabricated to investigate the lasing modes and polarization modulation. Dominant coupling of the surface plasmon mode has been achieved by optimizing the hybrid nanolaser structures, which significantly enhances the electric field concentration, leading to an ultralow threshold (∼1.19 W cm–2) plasmonic multimode lasing. Based on the theoretical and experimental results, it is proposed that the suitable plasmonic structural parameters could provide wave-vector matching and phase compensation to form a strong plasmon resonator, yielding a low radiative loss and high gain for the laser. These InGaN/GaN nanorod arrays for the hybrid nanolaser not only provide a solution to the ultralow-threshold nanorod-based plasmonic lasers but also advocate the prospect of the greater potential of nanoscale arrays for luminescence and displays. These findings and understandings provide vital insights into the developments of electrically driven plasmonic nanolasers and may contribute to the realization of nanolaser-based display arrays and optical on-chip integration for the next generation of logic circuits. |
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AbstractList | Lasers with small size have demonstrated great potential in numerous applications including communication, optical computing, detection, displays, and optical logic circuits. In this study, hybrid plasmonic nanolasers with metal pad structures based on the InGaN/GaN nanorod are designed and fabricated to investigate the lasing modes and polarization modulation. Dominant coupling of the surface plasmon mode has been achieved by optimizing the hybrid nanolaser structures, which significantly enhances the electric field concentration, leading to an ultralow threshold (∼1.19 W cm–2) plasmonic multimode lasing. Based on the theoretical and experimental results, it is proposed that the suitable plasmonic structural parameters could provide wave-vector matching and phase compensation to form a strong plasmon resonator, yielding a low radiative loss and high gain for the laser. These InGaN/GaN nanorod arrays for the hybrid nanolaser not only provide a solution to the ultralow-threshold nanorod-based plasmonic lasers but also advocate the prospect of the greater potential of nanoscale arrays for luminescence and displays. These findings and understandings provide vital insights into the developments of electrically driven plasmonic nanolasers and may contribute to the realization of nanolaser-based display arrays and optical on-chip integration for the next generation of logic circuits. |
Author | Jiang, Di Liu, Bin Yan, Yu Zheng, Youdou Tao, Tao Kang, Junyong Li, Penggang Zhi, Ting Zhang, Rong Xie, Zili Huang, Kai |
AuthorAffiliation | Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing National Laboratory of Microstructures, School of Electronic Science and Engineering College of Electronic and Optical Engineering, College of Flexible Electronics (Future Technology) Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductors Materials and Applications Nanjing University |
AuthorAffiliation_xml | – name: Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductors Materials and Applications – name: Nanjing University – name: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing National Laboratory of Microstructures, School of Electronic Science and Engineering – name: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures – name: College of Electronic and Optical Engineering, College of Flexible Electronics (Future Technology) |
Author_xml | – sequence: 1 givenname: Di surname: Jiang fullname: Jiang, Di organization: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures – sequence: 2 givenname: Penggang surname: Li fullname: Li, Penggang organization: Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductors Materials and Applications – sequence: 3 givenname: Bin orcidid: 0000-0002-9495-6809 surname: Liu fullname: Liu, Bin email: bliu@nju.edu.cn organization: Nanjing University – sequence: 4 givenname: Kai surname: Huang fullname: Huang, Kai email: k_huang@xmu.edu.cn organization: Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductors Materials and Applications – sequence: 5 givenname: Tao surname: Tao fullname: Tao, Tao email: ttao@nju.edu.cn organization: Nanjing University – sequence: 6 givenname: Ting surname: Zhi fullname: Zhi, Ting organization: College of Electronic and Optical Engineering, College of Flexible Electronics (Future Technology) – sequence: 7 givenname: Yu surname: Yan fullname: Yan, Yu organization: Nanjing University – sequence: 8 givenname: Zili surname: Xie fullname: Xie, Zili organization: Nanjing University – sequence: 9 givenname: Junyong surname: Kang fullname: Kang, Junyong organization: Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductors Materials and Applications – sequence: 10 givenname: Youdou surname: Zheng fullname: Zheng, Youdou organization: Nanjing University – sequence: 11 givenname: Rong surname: Zhang fullname: Zhang, Rong organization: Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductors Materials and Applications |
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