Ferroelectricity in HfO2 from a Coordination Number Perspective
Ferroelectricity observed in thin-film HfO2, either doped with Si, Al, and so forth or in the Hf0.5Zr0.5O2 form, has gained great technical significance. While a trilinear coupling between phonon modes could explain its ferroelectric distortion, from a practical perspective, one may be concerned wit...
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Published in | Chemistry of materials Vol. 35; no. 1; pp. 94 - 103 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
American Chemical Society
10.01.2023
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Abstract | Ferroelectricity observed in thin-film HfO2, either doped with Si, Al, and so forth or in the Hf0.5Zr0.5O2 form, has gained great technical significance. While a trilinear coupling between phonon modes could explain its ferroelectric distortion, from a practical perspective, one may be concerned with a theory that is more straightforward to predict similar ferroelectric candidates through some apparent features of HfO2 and ZrO2. In this work, we propose that the 7 cation coordination number of HfO2/ZrO2 lies at the heart of this ferroelectricity, which stems from the proper ionic radii of Hf/Zr compared with O. Among the numerous compounds with a non-centrosymmetric nature, for example, the mm2 point group, HfO2 and ZrO2 are special in that they are close to the border of 7 and 8 cation coordination, such that the 8-coordination tetragonal intermediate phase could greatly reduce the switching barrier. Other 7-coordination candidates, including SrI2, TaON, YSBr, and YOF, are also studied in comparison to HfO2/ZrO2, and six switching paths are analyzed in detail for the Pca21 phase. A rule of the preferred switching path in terms of the ionic radii ratio and coordination number has been established. We also show the possible route from the ferroelectric Pca21 phase to the monoclinic P21/c phase in HfO2, which is relevant to the fatigue phenomenon. |
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AbstractList | Ferroelectricity observed in thin-film HfO2, either doped with Si, Al, and so forth or in the Hf0.5Zr0.5O2 form, has gained great technical significance. While a trilinear coupling between phonon modes could explain its ferroelectric distortion, from a practical perspective, one may be concerned with a theory that is more straightforward to predict similar ferroelectric candidates through some apparent features of HfO2 and ZrO2. In this work, we propose that the 7 cation coordination number of HfO2/ZrO2 lies at the heart of this ferroelectricity, which stems from the proper ionic radii of Hf/Zr compared with O. Among the numerous compounds with a non-centrosymmetric nature, for example, the mm2 point group, HfO2 and ZrO2 are special in that they are close to the border of 7 and 8 cation coordination, such that the 8-coordination tetragonal intermediate phase could greatly reduce the switching barrier. Other 7-coordination candidates, including SrI2, TaON, YSBr, and YOF, are also studied in comparison to HfO2/ZrO2, and six switching paths are analyzed in detail for the Pca21 phase. A rule of the preferred switching path in terms of the ionic radii ratio and coordination number has been established. We also show the possible route from the ferroelectric Pca21 phase to the monoclinic P21/c phase in HfO2, which is relevant to the fatigue phenomenon. |
Author | Xue, Kan-Hao Miao, Xiangshui Yuan, Jun-Hui Cheng, Yan Lyu, Hangbing Wang, Chengxu Mao, Ge-Qi Sun, Huajun Bai, Na Wang, Xingsheng |
AuthorAffiliation | Chinese Academy of Sciences East China Normal University Hubei Yangtze Memory Laboratories Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics School of Integrated Circuits, School of Optical and Electronic Information Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics |
AuthorAffiliation_xml | – name: Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics – name: East China Normal University – name: Hubei Yangtze Memory Laboratories – name: School of Integrated Circuits, School of Optical and Electronic Information – name: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics – name: Chinese Academy of Sciences |
Author_xml | – sequence: 1 givenname: Jun-Hui surname: Yuan fullname: Yuan, Jun-Hui organization: Hubei Yangtze Memory Laboratories – sequence: 2 givenname: Ge-Qi surname: Mao fullname: Mao, Ge-Qi organization: Hubei Yangtze Memory Laboratories – sequence: 3 givenname: Kan-Hao orcidid: 0000-0002-2894-7912 surname: Xue fullname: Xue, Kan-Hao email: xkh@hust.edu.cn organization: Hubei Yangtze Memory Laboratories – sequence: 4 givenname: Na surname: Bai fullname: Bai, Na organization: Hubei Yangtze Memory Laboratories – sequence: 5 givenname: Chengxu surname: Wang fullname: Wang, Chengxu organization: Hubei Yangtze Memory Laboratories – sequence: 6 givenname: Yan surname: Cheng fullname: Cheng, Yan organization: East China Normal University – sequence: 7 givenname: Hangbing surname: Lyu fullname: Lyu, Hangbing organization: Chinese Academy of Sciences – sequence: 8 givenname: Huajun surname: Sun fullname: Sun, Huajun organization: Hubei Yangtze Memory Laboratories – sequence: 9 givenname: Xingsheng orcidid: 0000-0001-8335-2033 surname: Wang fullname: Wang, Xingsheng organization: Hubei Yangtze Memory Laboratories – sequence: 10 givenname: Xiangshui surname: Miao fullname: Miao, Xiangshui organization: Hubei Yangtze Memory Laboratories |
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Snippet | Ferroelectricity observed in thin-film HfO2, either doped with Si, Al, and so forth or in the Hf0.5Zr0.5O2 form, has gained great technical significance. While... |
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Title | Ferroelectricity in HfO2 from a Coordination Number Perspective |
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