Thickness-Dependent Phase Stability and Electronic Properties of GaN Nanosheets and MoS2/GaN van der Waals Heterostructures

• Published in: Journal of physical chemistry. C Vol. 123; no. 6; pp. 3861 - 3867
• Main Authors: Wang, Jun, Shu, Haibo, Liang, Pei, Wang, Ning, Cao, Dan, Chen, Xiaoshuang
• Format: Journal Article
• Language: English
• Published: American Chemical Society 14.02.2019
• Subjects: absorbance; density functional theory; molybdenum disulfide; nanosheets; photocatalysis; physical chemistry; semiconductors; van der Waals forces

The formation of GaN-based heterostructures is essential for optoelectronic applications, but it is greatly limited by the traditional heteroepitaxial method due to the impact of lattice mismatch. Integrating two-dimensional layered semiconductors (e.g., MoS2) on GaN surface into van der Waals (vdW)...