APA (7th ed.) Citation

Wang, J., Shu, H., Liang, P., Wang, N., Cao, D., & Chen, X. (2019). Thickness-Dependent Phase Stability and Electronic Properties of GaN Nanosheets and MoS2/GaN van der Waals Heterostructures. Journal of physical chemistry. C, 123(6), 3861-3867. https://doi.org/10.1021/acs.jpcc.8b10915

Chicago Style (17th ed.) Citation

Wang, Jun, Haibo Shu, Pei Liang, Ning Wang, Dan Cao, and Xiaoshuang Chen. "Thickness-Dependent Phase Stability and Electronic Properties of GaN Nanosheets and MoS2/GaN Van Der Waals Heterostructures." Journal of Physical Chemistry. C 123, no. 6 (2019): 3861-3867. https://doi.org/10.1021/acs.jpcc.8b10915.

MLA (9th ed.) Citation

Wang, Jun, et al. "Thickness-Dependent Phase Stability and Electronic Properties of GaN Nanosheets and MoS2/GaN Van Der Waals Heterostructures." Journal of Physical Chemistry. C, vol. 123, no. 6, 2019, pp. 3861-3867, https://doi.org/10.1021/acs.jpcc.8b10915.