Reduced Turn-On Voltage and Boosted Mobility in Monolayer WS2 Transistors by Mild Ar+ Plasma Treatment - Hou, Junfeng; Ke, Congming; Chen, Jiajun; Sun, Baofan; Xia, Yuanzheng; Li, Xu; Chen, Ting; Wu, Yaping; Wu, Zhiming; Kang, Junyong (ACS applied materials & interfaces, 2020)
Keywords: argon (noble gases); comparative study; density functional theory; disulfides; electric potential difference; electrical conductivity; optical properties; photoluminescence; processing time; Raman spectroscopy; transistors; tungsten; vapors; work function; tungsten disulfide (WS2); WS2 field-effect transistors; Ar+ plasma treatment; Schottky barrier (SB)