Heteroepitaxial Growth of an Ultrathin β‑Ga2O3 Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling

• Published in: ACS omega Vol. 7; no. 45; pp. 41236 - 41245
• Main Authors: Mondal, Abhay Kumar, Deivasigamani, Revathy, Ping, Loh Kean, Shazni Mohammad Haniff, Muhammad Aniq, Goh, Boon Tong, Horng, Ray Hua, Mohamed, Mohd Ambri
• Format: Journal Article
• Language: English
• Published: American Chemical Society 15.11.2022

β-Gallium oxide (Ga2O3) has received intensive attention in the scientific community as a significant high-power switching semiconductor material because of its remarkable intrinsic physical characteristics and growth stability. This work reports the heteroepitaxial growth of the β-Ga2O3 ultrathin f...