Hydrogenated Dilute Nitride Semiconductors Theory, Properties, and Applications

• Main Author: Ciatto, Gianluca
• Format: eBook
• Language: English
• Published: United Kingdom Jenny Stanford Publishing 2015; Pan Stanford; CRC Press
• Edition: 1
• Subjects: Nitrides; Physics; Semiconductors; Relaxed Lattice Parameter; EXAFS Function; CB Minimum; Wire Axis; PL Spectrum; Dilute Nitride; NC State; Band Anticrossing Model; XANES Region; Band Gap Energy; IR Line; GaAs QW; CBE Energy; Lattice Parameter; Atomic Form Factor; Compositional Dependence; XANES Spectrum; Reciprocal Space Maps; Ga Atoms; IBA Technique; Hydrogenated Sample; XAFS Measurement; CB Edge; NRA; Band Gap Shift

The nonlinear behavior of nitrogen and the passivation effect of hydrogen in dilute nitrides open the way to the manufacture of a new class of nanostructured devices with in-plane variation of the optical band gap. This book addresses the modifications of the electronic structure and of the optical...