Hydrogenated Dilute Nitride Semiconductors Theory, Properties, and Applications

The nonlinear behavior of nitrogen and the passivation effect of hydrogen in dilute nitrides open the way to the manufacture of a new class of nanostructured devices with in-plane variation of the optical band gap. This book addresses the modifications of the electronic structure and of the optical...

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Bibliographic Details
Main Author Ciatto, Gianluca
Format eBook
LanguageEnglish
Published United Kingdom Jenny Stanford Publishing 2015
Pan Stanford
CRC Press
Edition1
Subjects
Nitrides
Physics
Semiconductors
Relaxed Lattice Parameter
EXAFS Function
CB Minimum
Wire Axis
PL Spectrum
Dilute Nitride
NC State
Band Anticrossing Model
XANES Region
Band Gap Energy
IR Line
GaAs QW
CBE Energy
Lattice Parameter
Atomic Form Factor
Compositional Dependence
XANES Spectrum
Reciprocal Space Maps
Ga Atoms
IBA Technique
Hydrogenated Sample
XAFS Measurement
CB Edge
NRA
Band Gap Shift
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Table of Contents:
  • Front Cover -- Contents -- Preface -- Chapter 1 An Overview of Dilute Nitrides Theory and Properties -- Chapter 2 Effects of Hydrogenation on the Electronic Properties of Dilute Nitrides -- Chapter 3 Effect of H on Defects in Dilute Nitrides -- Chapter 4 Theory of Hydrogen in Dilute Nitrides -- Chapter 5 Microscopic Structure of N- Hn Complexes in Dilute Nitride Semiconductors Revealed by Their Vibrational Properties -- Chapter 6 Structure of Nitrogen- Hydrogen Complexes from X- Ray and Synchrotron Radiation Techniques -- Chapter 7 Stoichiometry of Nitrogen- Hydrogen Complexes in Dilute Nitrides -- Chapter 8 Technological Applications of Hydrogenated Dilute Nitrides and Perspectives -- Bibliography -- Back Cover