Ultrafast, Self-Driven, and Air-Stable Photodetectors Based on Multilayer PtSe2/Perovskite Heterojunctions
We report on the large-scale synthesis of polycrystalline multilayer PtSe2 film with typical semimetallic characteristics. With the availability of the large-area film, we constructed a heterojunction composed of multilayer PtSe2 and Cs-doped FAPbI3, which can function as a self-driven photodetector...
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Published in | The journal of physical chemistry letters Vol. 9; no. 6; pp. 1185 - 1194 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
American Chemical Society
15.03.2018
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Abstract | We report on the large-scale synthesis of polycrystalline multilayer PtSe2 film with typical semimetallic characteristics. With the availability of the large-area film, we constructed a heterojunction composed of multilayer PtSe2 and Cs-doped FAPbI3, which can function as a self-driven photodetector in a broadband wavelength from the ultraviolet to the near-infrared region. Further photoresponse analysis revealed that the heterojunction device showed outstanding photosensitive characteristics with a large I light/I dark ratio of 5.7 × 103, high responsivity of 117.7 mA W–1, and decent specific detectivity of 2.91 × 1012 Jones at zero bias. More importantly, the rise/fall times were estimated to be 78/60 ns, rendering our device the fastest device among perovskite-2D photodetectors reported to date. In addition, it was also observed that the PtSe2/perovskite photodetector can almost retain its photoresponse properties after storage in ambient conditions for 3 weeks. This study suggests the potential of the present PtSe2/perovskite heterojunction for future air-stable ultrafast photodetecting applications. |
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AbstractList | We report on the large-scale synthesis of polycrystalline multilayer PtSe2 film with typical semimetallic characteristics. With the availability of the large-area film, we constructed a heterojunction composed of multilayer PtSe2 and Cs-doped FAPbI3, which can function as a self-driven photodetector in a broadband wavelength from the ultraviolet to the near-infrared region. Further photoresponse analysis revealed that the heterojunction device showed outstanding photosensitive characteristics with a large I light/I dark ratio of 5.7 × 103, high responsivity of 117.7 mA W–1, and decent specific detectivity of 2.91 × 1012 Jones at zero bias. More importantly, the rise/fall times were estimated to be 78/60 ns, rendering our device the fastest device among perovskite-2D photodetectors reported to date. In addition, it was also observed that the PtSe2/perovskite photodetector can almost retain its photoresponse properties after storage in ambient conditions for 3 weeks. This study suggests the potential of the present PtSe2/perovskite heterojunction for future air-stable ultrafast photodetecting applications. We report on the large-scale synthesis of polycrystalline multilayer PtSe2 film with typical semimetallic characteristics. With the availability of the large-area film, we constructed a heterojunction composed of multilayer PtSe2 and Cs-doped FAPbI3, which can function as a self-driven photodetector in a broadband wavelength from the ultraviolet to the near-infrared region. Further photoresponse analysis revealed that the heterojunction device showed outstanding photosensitive characteristics with a large Ilight/ Idark ratio of 5.7 × 103, high responsivity of 117.7 mA W-1, and decent specific detectivity of 2.91 × 1012 Jones at zero bias. More importantly, the rise/fall times were estimated to be 78/60 ns, rendering our device the fastest device among perovskite-2D photodetectors reported to date. In addition, it was also observed that the PtSe2/perovskite photodetector can almost retain its photoresponse properties after storage in ambient conditions for 3 weeks. This study suggests the potential of the present PtSe2/perovskite heterojunction for future air-stable ultrafast photodetecting applications.We report on the large-scale synthesis of polycrystalline multilayer PtSe2 film with typical semimetallic characteristics. With the availability of the large-area film, we constructed a heterojunction composed of multilayer PtSe2 and Cs-doped FAPbI3, which can function as a self-driven photodetector in a broadband wavelength from the ultraviolet to the near-infrared region. Further photoresponse analysis revealed that the heterojunction device showed outstanding photosensitive characteristics with a large Ilight/ Idark ratio of 5.7 × 103, high responsivity of 117.7 mA W-1, and decent specific detectivity of 2.91 × 1012 Jones at zero bias. More importantly, the rise/fall times were estimated to be 78/60 ns, rendering our device the fastest device among perovskite-2D photodetectors reported to date. In addition, it was also observed that the PtSe2/perovskite photodetector can almost retain its photoresponse properties after storage in ambient conditions for 3 weeks. This study suggests the potential of the present PtSe2/perovskite heterojunction for future air-stable ultrafast photodetecting applications. |
Author | Tsang, Yuen Hong Long-Hui Zeng Xie, Chao Wu, Yu-Cheng Zhang, Zhi-Xiang Luo, Lin-Bao Gao, Yang Tong, Xiao-Wei |
AuthorAffiliation | School of Materials Science and Engineering School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices Department of Applied Physics and Materials Research Center Hong Kong Polytechnic University Hefei University of Technology |
AuthorAffiliation_xml | – name: Hong Kong Polytechnic University – name: Hefei University of Technology – name: Department of Applied Physics and Materials Research Center – name: School of Materials Science and Engineering – name: School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices |
Author_xml | – sequence: 1 givenname: Zhi-Xiang surname: Zhang fullname: Zhang, Zhi-Xiang organization: School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices – sequence: 2 surname: Long-Hui Zeng fullname: Long-Hui Zeng organization: Hong Kong Polytechnic University – sequence: 3 givenname: Xiao-Wei surname: Tong fullname: Tong, Xiao-Wei organization: School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices – sequence: 4 givenname: Yang surname: Gao fullname: Gao, Yang organization: School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices – sequence: 5 givenname: Chao orcidid: 0000-0003-4451-767X surname: Xie fullname: Xie, Chao email: chao.xie@hfut.edu.cn organization: School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices – sequence: 6 givenname: Yuen Hong orcidid: 0000-0001-5632-5224 surname: Tsang fullname: Tsang, Yuen Hong organization: Hong Kong Polytechnic University – sequence: 7 givenname: Lin-Bao orcidid: 0000-0001-8651-8764 surname: Luo fullname: Luo, Lin-Bao email: luolb@hfut.edu.cn organization: School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices – sequence: 8 givenname: Yu-Cheng surname: Wu fullname: Wu, Yu-Cheng email: ycwu@hfut.edu.cn organization: Hefei University of Technology |
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