Insights into Multilevel Resistive Switching in Monolayer MoS2

• Published in: ACS applied materials & interfaces Vol. 12; no. 5; pp. 6022 - 6029
• Main Authors: Bhattacharjee, Shubhadeep, Caruso, Enrico, McEvoy, Niall, Ó Coileáin, Cormac, O’Neill, Katie, Ansari, Lida, Duesberg, Georg S, Nagle, Roger, Cherkaoui, Karim, Gity, Farzan, Hurley, Paul K
• Format: Journal Article
• Language: English
• Published: American Chemical Society 05.02.2020
• Subjects: memory; filamentary; memristor; monolayer molybdenum disulphide; resistive switching; transport mechanism; multistate

The advent of two-dimensional materials has opened a plethora of opportunities in accessing ultrascaled device dimensions for future logic and memory applications. In this work, we demonstrate that a single layer of large-area chemical vapor deposition-grown molybdenum disulfide (MoS2) sandwiched be...