Above Room-Temperature Ferromagnetism in Wafer-Scale Two-Dimensional van der Waals Fe3GeTe2 Tailored by a Topological Insulator

• Published in: ACS nano Vol. 14; no. 8; pp. 10045 - 10053
• Main Authors: Wang, Haiyu, Liu, Yingjie, Wu, Peichen, Hou, Wenjie, Jiang, Yuhao, Li, Xiaohui, Pandey, Chandan, Chen, Dongdong, Yang, Qing, Wang, Hangtian, Wei, Dahai, Lei, Na, Kang, Wang, Wen, Lianggong, Nie, Tianxiao, Zhao, Weisheng, Wang, Kang L
• Format: Journal Article
• Language: English
• Published: American Chemical Society 25.08.2020
• Subjects: topological insulator; wafer scale; room temperature; interfacial engineering effect; two-dimensional ferromagnetic material

The emerging two-dimensional ferromagnetic materials present atomic layer thickness and a perfect interface feature, which have become an attractive research direction in the field of spintronics for low power and deep nanoscale integration. However, it has been proven to be extremely challenging to...