Ene-like Reaction of Cyclopentene on Si(001)-2 × 1: An XPS and NEXAFS Study

The control and the understanding of single-molecule covalent coatings on silicon surfaces is increasingly important in designing nanoscale electrical elements, such as organic/inorganic semiconductor hybrid structures. In this respect, ordered arrays of cyclopentene deposited on Si(001)-2 × 1 appea...

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Published inJournal of physical chemistry. C Vol. 116; no. 23; pp. 12680 - 12686
Main Authors Khaliq, Anzar, Pierucci, Debora, Tissot, Héloïse, Gallet, Jean-Jacques, Bournel, Fabrice, Rochet, François, Silly, Mathieu, Sirotti, Fausto
Format Journal Article
LanguageEnglish
Published American Chemical Society 14.06.2012
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Chemical Sciences
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Abstract The control and the understanding of single-molecule covalent coatings on silicon surfaces is increasingly important in designing nanoscale electrical elements, such as organic/inorganic semiconductor hybrid structures. In this respect, ordered arrays of cyclopentene deposited on Si(001)-2 × 1 appear as promising buffer layers for further molecular crystal growth on the substrate. In this work, we examine the adsorption of cyclopentene on Si(001)-2 × 1 at 130 and 280 °C by means of C 1s XPS and NEXAFS. Until now cryogenic and room-temperature adsorption studies tended to prove that cyclopentene adsorption results from a formal cycloaddition ([2 + 2]-like) reaction of the CC double bond with a silicon dimer. Our XPS/NEXAFS study reveals that an ene-like reaction competes with the [2 + 2]-like reaction channel, leading to the formation of products bearing a CC bond, already at deposition temperature as low as ∼130 °C. This work helps to determine the optimum conditions leading to optimal chemical order in view of applications of cyclopentene as a buffer layer.
AbstractList The control and the understanding of single-molecule covalent coatings on silicon surfaces is increasingly important in designing nanoscale electrical elements, such as organic/inorganic semiconductor hybrid structures. In this respect, ordered arrays of cyclopentene deposited on Si(001)-2 × 1 appear as promising buffer layers for further molecular crystal growth on the substrate. In this work, we examine the adsorption of cyclopentene on Si(001)-2 × 1 at 130 and 280 °C by means of C 1s XPS and NEXAFS. Until now cryogenic and room-temperature adsorption studies tended to prove that cyclopentene adsorption results from a formal cycloaddition ([2 + 2]-like) reaction of the CC double bond with a silicon dimer. Our XPS/NEXAFS study reveals that an ene-like reaction competes with the [2 + 2]-like reaction channel, leading to the formation of products bearing a CC bond, already at deposition temperature as low as ∼130 °C. This work helps to determine the optimum conditions leading to optimal chemical order in view of applications of cyclopentene as a buffer layer.
Author Silly, Mathieu
Pierucci, Debora
Tissot, Héloïse
Khaliq, Anzar
Gallet, Jean-Jacques
Rochet, François
Bournel, Fabrice
Sirotti, Fausto
AuthorAffiliation Synchrotron SOLEIL
Université Pierre et Marie Curie
AuthorAffiliation_xml – name: Université Pierre et Marie Curie
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  givenname: Anzar
  surname: Khaliq
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  givenname: François
  surname: Rochet
  fullname: Rochet, François
  email: francois.rochet@upmc.fr
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  surname: Silly
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  fullname: Sirotti, Fausto
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Title Ene-like Reaction of Cyclopentene on Si(001)-2 × 1: An XPS and NEXAFS Study
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