MoSe2 Quantum Dots Enhance the Performance of ZnO Nanostructure-Based UV Photodetectors
Zinc oxide (ZnO) nanostructures are extensively used as active materials for ultraviolet (UV) photodetectors, but the high dark current arising from intrinsic defects limits their performance. An emerging strategy to alleviate such problems includes the formation of heterostructures with transition...
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Published in | ACS applied nano materials Vol. 7; no. 4; pp. 3835 - 3842 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
American Chemical Society
23.02.2024
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Abstract | Zinc oxide (ZnO) nanostructures are extensively used as active materials for ultraviolet (UV) photodetectors, but the high dark current arising from intrinsic defects limits their performance. An emerging strategy to alleviate such problems includes the formation of heterostructures with transition metal dichalcogenides (TMDs), which until today have been limited to their two-dimensional structures, leaving the superior physicochemical properties in their quantum dot (QD) configuration untapped. Here, we devise a strategy to reduce surface defects by decorating ZnO nanorods with MoSe2 QDs fabricated through pulsed-laser ablation, using a facile spin-coating method. Through various surface and optical characterizations, we confirm the formation of heterostructures, wherein MoSe2 reduces the number of vacancy defects in the ZnO. As a result, when used as a UV photodetector, the heterostructures exhibit a simultaneous 51% decrease in dark current and 79% increase in photocurrent, i.e., a 4-fold sensitivity compared to the pure ZnO counterpart. Our study presents a strategy to enhance UV photodetector efficiency by utilizing metal oxide/quantum dot heterostructures produced through a facile method. In a broader context, it underscores the efficacy of quantum dot-based heterostructures in optimizing optoelectronic devices. |
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AbstractList | Zinc oxide (ZnO) nanostructures are extensively used as active materials for ultraviolet (UV) photodetectors, but the high dark current arising from intrinsic defects limits their performance. An emerging strategy to alleviate such problems includes the formation of heterostructures with transition metal dichalcogenides (TMDs), which until today have been limited to their two-dimensional structures, leaving the superior physicochemical properties in their quantum dot (QD) configuration untapped. Here, we devise a strategy to reduce surface defects by decorating ZnO nanorods with MoSe2 QDs fabricated through pulsed-laser ablation, using a facile spin-coating method. Through various surface and optical characterizations, we confirm the formation of heterostructures, wherein MoSe2 reduces the number of vacancy defects in the ZnO. As a result, when used as a UV photodetector, the heterostructures exhibit a simultaneous 51% decrease in dark current and 79% increase in photocurrent, i.e., a 4-fold sensitivity compared to the pure ZnO counterpart. Our study presents a strategy to enhance UV photodetector efficiency by utilizing metal oxide/quantum dot heterostructures produced through a facile method. In a broader context, it underscores the efficacy of quantum dot-based heterostructures in optimizing optoelectronic devices. |
Author | Dwiputra, Muhammad Adam Fauzia, Vivi Putri, Nur Ajrina Winata, Suci Mufidah Nugroho, Ferry Anggoro Ardy Ginting, Riski Titian Isnaeni |
AuthorAffiliation | Research Center for Photonics Department of Electrical Engineering Department of Physics, Faculty of Mathematics and Natural Sciences |
AuthorAffiliation_xml | – name: Research Center for Photonics – name: Department of Physics, Faculty of Mathematics and Natural Sciences – name: Department of Electrical Engineering |
Author_xml | – sequence: 1 givenname: Nur Ajrina surname: Putri fullname: Putri, Nur Ajrina organization: Department of Physics, Faculty of Mathematics and Natural Sciences – sequence: 2 givenname: Muhammad Adam surname: Dwiputra fullname: Dwiputra, Muhammad Adam organization: Department of Physics, Faculty of Mathematics and Natural Sciences – sequence: 3 givenname: Suci Mufidah surname: Winata fullname: Winata, Suci Mufidah organization: Department of Physics, Faculty of Mathematics and Natural Sciences – sequence: 4 surname: Isnaeni fullname: Isnaeni organization: Research Center for Photonics – sequence: 5 givenname: Riski Titian surname: Ginting fullname: Ginting, Riski Titian organization: Department of Electrical Engineering – sequence: 6 givenname: Ferry Anggoro Ardy orcidid: 0000-0001-5571-0454 surname: Nugroho fullname: Nugroho, Ferry Anggoro Ardy email: f.a.a.nugroho@sci.ui.ac.id organization: Department of Physics, Faculty of Mathematics and Natural Sciences – sequence: 7 givenname: Vivi orcidid: 0000-0002-4593-4662 surname: Fauzia fullname: Fauzia, Vivi email: vivi@sci.ui.ac.id organization: Department of Physics, Faculty of Mathematics and Natural Sciences |
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Snippet | Zinc oxide (ZnO) nanostructures are extensively used as active materials for ultraviolet (UV) photodetectors, but the high dark current arising from intrinsic... |
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Title | MoSe2 Quantum Dots Enhance the Performance of ZnO Nanostructure-Based UV Photodetectors |
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