Mitigating Buried-Interface Energy Losses through Multifunctional Ligands in n–i–p Perovskite/Silicon Tandem Solar Cells

Fabricating efficient monolithic n–i–p perovskite/silicon tandem solar cells remains challenging, as evidenced by substantial recombination losses at the buried interface between the NbO x electron transport layer (ETL) and perovskite. Herein, we introduce a self-assembled fullerene (C60-SAM) interl...

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Published inACS energy letters Vol. 9; no. 9; pp. 4633 - 4644
Main Authors Zhang, Shanshan, Wang, Jiantao, Kalasariya, Nikhil, Dally, Pia, Deger, Caner, Yavuz, Ilhan, Razzaq, Arsalan, Vishal, Badri, Prasetio, Adi, Utomo, Drajad Satrio, Karalis, Orestis, Hempel, Hannes, Hnapovskyi, Vladyslav, Liu, Qing, Babics, Maxime, Said, Ahmed Ali, Pininti, Anil, Stolterfoht, Martin, De Wolf, Stefaan
Format Journal Article
LanguageEnglish
Published American Chemical Society 13.09.2024
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Abstract Fabricating efficient monolithic n–i–p perovskite/silicon tandem solar cells remains challenging, as evidenced by substantial recombination losses at the buried interface between the NbO x electron transport layer (ETL) and perovskite. Herein, we introduce a self-assembled fullerene (C60-SAM) interlayer at this interface, with a large monovalent organic cation incorporated. We find this enhances the surface conductivity of the ETL, mitigates interface recombination, and reduces the energetic mismatch with the overlying perovskite. At the device level, this results in efficient electron extraction and suppressed device hysteresis, substantiated by drift-diffusion simulations. The combination of these improvements led to hysteresis-free n–i–p perovskite/silicon tandem solar cells on textured silicon with an efficiency of 27% (over 1 cm2) and an open-circuit voltage reaching 1.9 V.
AbstractList Fabricating efficient monolithic n–i–p perovskite/silicon tandem solar cells remains challenging, as evidenced by substantial recombination losses at the buried interface between the NbO x electron transport layer (ETL) and perovskite. Herein, we introduce a self-assembled fullerene (C60-SAM) interlayer at this interface, with a large monovalent organic cation incorporated. We find this enhances the surface conductivity of the ETL, mitigates interface recombination, and reduces the energetic mismatch with the overlying perovskite. At the device level, this results in efficient electron extraction and suppressed device hysteresis, substantiated by drift-diffusion simulations. The combination of these improvements led to hysteresis-free n–i–p perovskite/silicon tandem solar cells on textured silicon with an efficiency of 27% (over 1 cm2) and an open-circuit voltage reaching 1.9 V.
Author Karalis, Orestis
Razzaq, Arsalan
Stolterfoht, Martin
Prasetio, Adi
Vishal, Badri
Wang, Jiantao
Hnapovskyi, Vladyslav
Kalasariya, Nikhil
Deger, Caner
Babics, Maxime
Said, Ahmed Ali
De Wolf, Stefaan
Yavuz, Ilhan
Zhang, Shanshan
Liu, Qing
Utomo, Drajad Satrio
Pininti, Anil
Hempel, Hannes
Dally, Pia
AuthorAffiliation KAUST Solar Center
Electronic Engineering Department
Department of Physics
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