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KURAGUCHI MASAHIKO » KAWAGUCHI MASAHIKO
Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT
Saito, W., Domon, T., Omura, I., Kuraguchi, M., Takada, Y., Tsuda, K., Yamaguchi, M.
Published in IEEE electron device letters (01.05.2006)
Published in IEEE electron device letters (01.05.2006)
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Journal Article
Effect of Buffer Layer Structure on Drain Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs
Saito, W., Noda, T., Kuraguchi, M., Takada, Y., Tsuda, K., Saito, Y., Omura, I., Yamaguchi, M.
Published in IEEE transactions on electron devices (01.07.2009)
Published in IEEE transactions on electron devices (01.07.2009)
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Journal Article
Over 550 V breakdown voltage of InAlN/GaN HEMT on Si
Saito, Hisashi, Takada, Yoshiharu, Kuraguchi, Masahiko, Yumoto, Miki, Tsuda, Kunio
Published in Physica status solidi. C (01.05.2013)
Published in Physica status solidi. C (01.05.2013)
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Journal Article
Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications
Saito, Wataru, Takada, Yoshiharu, Kuraguchi, Masahiko, Tsuda, Kunio, Omura, Ichiro, Ogura, Tsuneo
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Journal Article
Improvement of Channel Mobility of GaN‐MOSFETs With Thermal Treatment for Recess Surface
Uesugi, Kenjiro, Shindome, Aya, Kajiwara, Yosuke, Yonehara, Toshiya, Kato, Daimotsu, Hikosaka, Toshiki, Kuraguchi, Masahiko, Nunoue, Shinya
Published in Physica status solidi. A, Applications and materials science (23.05.2018)
Published in Physica status solidi. A, Applications and materials science (23.05.2018)
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Journal Article
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Saito, W., Takada, Y., Kuraguchi, M., Tsuda, K., Omura, I., Ogura, T., Ohashi, H.
Published in IEEE transactions on electron devices (01.12.2003)
Published in IEEE transactions on electron devices (01.12.2003)
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Journal Article
Suppression of short-channel effects in normally-off GaN MOSFETs with deep recessed-gate structures
Kato, Daimotsu, Kajiwara, Yosuke, Mukai, Akira, Ono, Hiroshi, Shindome, Aya, Tajima, Jumpei, Hikosaka, Toshiki, Kuraguchi, Masahiko, Nunoue, Shinya
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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Journal Article
3.2 m Omega cm super(2) enhancement-mode GaN MOSFETs with breakdown voltage of 800 V
Saito, Hisashi, Yumoto, Miki, Fukatsu, Shigeto, Kajiwara, Yosuke, Shindome, Aya, Oasa, Kohei, Takada, Yoshiharu, Tsuda, Kunio, Kuraguchi, Masahiko
Published in Physica status solidi. C (01.05.2016)
Published in Physica status solidi. C (01.05.2016)
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Journal Article
3.2 m[Omega]cm2 enhancement-mode GaN MOSFETs with breakdown voltage of 800 V
Saito, Hisashi, Yumoto, Miki, Fukatsu, Shigeto, Kajiwara, Yosuke, Shindome, Aya, Oasa, Kohei, Takada, Yoshiharu, Tsuda, Kunio, Kuraguchi, Masahiko
Published in Physica status solidi. C (01.05.2016)
Published in Physica status solidi. C (01.05.2016)
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Journal Article
3.2 mΩcm2 enhancement-mode GaN MOSFETs with breakdown voltage of 800 V
Saito, Hisashi, Yumoto, Miki, Fukatsu, Shigeto, Kajiwara, Yosuke, Shindome, Aya, Oasa, Kohei, Takada, Yoshiharu, Tsuda, Kunio, Kuraguchi, Masahiko
Published in Physica status solidi. C (01.05.2016)
Published in Physica status solidi. C (01.05.2016)
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Journal Article
3.2 mΩcm 2 enhancement‐mode GaN MOSFETs with breakdown voltage of 800 V
Saito, Hisashi, Yumoto, Miki, Fukatsu, Shigeto, Kajiwara, Yosuke, Shindome, Aya, Oasa, Kohei, Takada, Yoshiharu, Tsuda, Kunio, Kuraguchi, Masahiko
Published in Physica status solidi. C (01.05.2016)
Published in Physica status solidi. C (01.05.2016)
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Journal Article