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Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for RONA-VB tradeoff characteristics
SAITO, Wataru, KURAGUCHI, Masahiko, TAKADA, Yoshiharu, TSUDA, Kunio, OMURA, Ichiro, OGURA, Tsuneo
Published in IEEE transactions on electron devices (2005)
Published in IEEE transactions on electron devices (2005)
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Journal Article
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
ONO, Hiroshi, HIKOSAKA, Toshiki, KURAGUCHI, Masahiko, TAJIMA, Jumpei, NUNOUE, Shinya
Year of Publication 31.03.2022
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Year of Publication 31.03.2022
Patent
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, POWER CIRCUIT, AND COMPUTER
YONEHARA, Toshiya, MUKAI, Akira, KURAGUCHI, Masahiko, SHIMIZU, Tatsuo
Year of Publication 31.03.2022
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Year of Publication 31.03.2022
Patent
Semiconductor device, method for manufacturing the same, power circuit, and computer
Shimizu, Tatsuo, Kuraguchi, Masahiko, Yonehara, Toshiya, Mukai, Akira
Year of Publication 18.01.2022
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Year of Publication 18.01.2022
Patent
Semiconductor device and method for manufacturing the same
Tajima, Jumpei, Nunoue, Shinya, Ono, Hiroshi, Kuraguchi, Masahiko, Hikosaka, Toshiki
Year of Publication 28.12.2021
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Year of Publication 28.12.2021
Patent
SEMICONDUCTOR DEVICE INCLUDING DIFFERENT NITRIDE REGIONS AND METHOD FOR MANUFACTURING SAME
SHINDOME, Aya, ONO, Hiroshi, MUKAI, Akira, KAJIWARA, Yosuke, KURAGUCHI, Masahiko, KATO, Daimotsu
Year of Publication 24.08.2023
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Year of Publication 24.08.2023
Patent
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
HUANG, Po-Chin, HIKOSAKA, Toshiki, KAJIWARA, Yosuke, KURAGUCHI, Masahiko, TAJIMA, Jumpei
Year of Publication 10.08.2023
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Year of Publication 10.08.2023
Patent
Semiconductor device including different nitride regions and method for manufacturing same
Shindome, Aya, Kato, Daimotsu, Ono, Hiroshi, Kajiwara, Yosuke, Kuraguchi, Masahiko, Mukai, Akira
Year of Publication 13.06.2023
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Year of Publication 13.06.2023
Patent