Fabrication of p-n junctions in ZnO by arsenic ion implantation followed by annealing in atomic oxygen
Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B.
Published in Inorganic materials (01.07.2007)
Published in Inorganic materials (01.07.2007)
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Journal Article
Structure and electrical conductivity of selenium-ion-implanted CdSe films
Georgobiani, A. N., Levonovich, B. N., Avetisov, I. Kh
Published in Inorganic materials (01.06.2010)
Published in Inorganic materials (01.06.2010)
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Journal Article
Radical-beam gettering epitaxy of GaN layers on nitrogen-ion-implanted GaAs substrates
Georgobiani, A. N., Rogozin, I. V., Kotlyarevsky, M. B.
Published in Inorganic materials (01.08.2006)
Published in Inorganic materials (01.08.2006)
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Journal Article
Optical and electrical properties of radical beam gettering epitaxy grown n- and p-type ZnO single crystals
Butkhuzi, T.V., Bureyev, A.V., Georgobiani, A.N., Kekelidze, N.P., Khulordava, T.G.
Published in Journal of crystal growth (02.02.1992)
Published in Journal of crystal growth (02.02.1992)
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Journal Article
Conference Proceeding
Radical-Beam Gettering Epitaxy of ZnO Films under UV Irradiation
Georgobiani, A. N., Kotlyarevsky, M. B., Rogozin, I. V., Marakhovskii, A. V.
Published in Inorganic materials (01.06.2005)
Published in Inorganic materials (01.06.2005)
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Journal Article
Effect of Pr3+ on the stokes luminescence of YPO4:Nd3+ under IR excitation
Manashirov, O. Ya, Georgobiani, A. N., Gutan, V. B., Zvereva, E. M., Lobanov, A. N.
Published in Inorganic materials (01.09.2011)
Published in Inorganic materials (01.09.2011)
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Journal Article
Energy transfer in Ce and Eu co-doped barium thiogallate: A photoluminescence characterization
Marceddu, M., Anedda, A., Corpino, R., Georgobiani, A.N., Ricci, P.C.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.01.2008)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.01.2008)
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Journal Article
Properties of epitaxial ZnO:P films
Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Demin, V. I.
Published in Inorganic materials (01.03.2013)
Published in Inorganic materials (01.03.2013)
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Journal Article
Luminescence and Optical-Memory model of SrAl2O4:Eu2+,Dy3+ and Sr4Al14O25:Eu2+,Dy3
Georgobiani, A. N., Gutan, V. B., Demin, V. I., Semendyaev, S. V.
Published in Inorganic materials (01.11.2009)
Published in Inorganic materials (01.11.2009)
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Journal Article
Activation of p-type conduction in ZnO:N films by annealing in atomic oxygen
Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Demin, V. I., Lepnev, L. S.
Published in Inorganic materials (01.06.2013)
Published in Inorganic materials (01.06.2013)
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Journal Article
Structural and electroluminescent properties of n-ZnO/p-GaN:Mg heterojunctions
Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Datskevich, N. P.
Published in Inorganic materials (01.11.2010)
Published in Inorganic materials (01.11.2010)
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Journal Article
Luminescence of BaSiO3 crystals doped with Er3+ and Yb3
Georgobiani, A. N., Barthou, C., Benalloul, P., Bakhtiyarly, I. B., Tagiev, K. O.
Published in Inorganic materials (01.09.2009)
Published in Inorganic materials (01.09.2009)
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Journal Article
Structure and photoluminescence of ZnGa2Se4:Eu2
Georgobiani, A. N., Tagiev, B. G., Guseinov, G. G., Kerimova, T. G., Tagiev, O. B., Asadullaeva, S. G.
Published in Inorganic materials (01.05.2010)
Published in Inorganic materials (01.05.2010)
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Journal Article