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RAMACHANDRAN, Gopi Chandran, BAJAJ, Geetika, GANGULI, Seshadri, GANDIKOTA, Srinivas
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Investigation of VT Shift Mechanism of High-K Dielectrics caused by Lanthanum Capping for NMOS and Tantalum Capping for PMOS Devices
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Published in ECS transactions (24.10.2008)
Published in ECS transactions (24.10.2008)
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