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Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM

Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM

by Kong, Zhenzhen, Lin, Hongxiao, Wang, Hailing, Song, Yanpeng, Li, Junjie, Liu, Xiaomeng, Du, Anyan, Miao, Yuanhao, Zhang, Yiwen, Ren, Yuhui, Li, Chen, Yu, Jiahan, Liu, Jinbiao, Liu, Jingxiong, Zhang, Qinzhu, Gao, Jianfeng, Li, Huihui, Wang, Xiangsheng, Li, Junfeng, Radamson, Henry H., Zhao, Chao, Ye, Tianchun, Wang, Guilei
Published in Journal of semiconductors (01.12.2023)

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Journal Article

Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

by Zhang, Xiaorui, Zhu, Huiping, Peng, Song’ang, Xiong, Guodong, Zhu, Chaoyi, Huang, Xinnan, Cao, Shurui, Zhang, Junjun, Yan, Yunpeng, Yao, Yao, Zhang, Dayong, Shi, Jingyuan, Wang, Lei, Li, Bo, Jin, Zhi
Published in Journal of semiconductors (01.11.2021)

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Synthesis and electromagnetic transport of large-area 2D WTe2 thin film

Synthesis and electromagnetic transport of large-area 2D WTe2 thin film

by Zhang, Yumeng, Wang, Zhejia, Feng, Jiaheng, Ming, Shuaiqiang, Qu, Furong, Xia, Yang, He, Meng, Hu, Zhimin, Wang, Jing
Published in Journal of semiconductors (01.10.2022)

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Uniform, fast, and reliable CMOS compatible resistive switching memory

Uniform, fast, and reliable CMOS compatible resistive switching memory

by Hao, Yunxia, Zhang, Ying, Wu, Zuheng, Zhang, Xumeng, Shi, Tuo, Wang, Yongzhou, Zhu, Jiaxue, Wang, Rui, Wang, Yan, Liu, Qi
Published in Journal of semiconductors (01.05.2022)

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The realization of a wide-angle voice transmission non-line-of-sight ultraviolet communication system

The realization of a wide-angle voice transmission non-line-of-sight ultraviolet communication system

by Deng, Yangyang, Wang, Yuehui, Zhang, Yiqing, Du, Axin, Liu, Jianguo
Published in Journal of semiconductors (01.09.2021)

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Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation

Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation

by Liu, Yongbo, Zhu, Huilong, Zhang, Yongkui, Wang, Xiaolei, Huang, Weixing, Li, Chen, Ai, Xuezheng, Wang, Qi
Published in Journal of semiconductors (01.01.2022)

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GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

by Liang, Feng, Zhao, Degang, Liu, Zongshun, Chen, Ping, Yang, Jing, Duan, Lihong, Shi, Yongsheng, Wang, Hai
Published in Journal of semiconductors (01.11.2021)

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Low-cost dual-stage offset-cancelled sense amplifier with hybrid read reference generator for improved read performance of RRAM at advanced technology nodes

Low-cost dual-stage offset-cancelled sense amplifier with hybrid read reference generator for improved read performance of RRAM at advanced technology nodes

by Wang, Qiao, Zhang, Donglin, Zhao, Yulin, Liu, Chao, Xu, Xiaoxin, Yang, Jianguo, Lv, Hangbing
Published in Journal of semiconductors (01.08.2021)

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Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

by Bi, Lan, Yao, Yixu, Jiang, Qimeng, Huang, Sen, Wang, Xinhua, Jin, Hao, Dai, Xinyue, Xu, Zhengyuan, Fan, Jie, Yin, Haibo, Wei, Ke, Liu, Xinyu
Published in Journal of semiconductors (01.03.2022)

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High-performance enhancement-mode GaN-based p-FETs fabricated with O3-Al2O3/HfO2-stacked gate dielectric

High-performance enhancement-mode GaN-based p-FETs fabricated with O3-Al2O3/HfO2-stacked gate dielectric

by Jin, Hao, Huang, Sen, Jiang, Qimeng, Wang, Yingjie, Fan, Jie, Yin, Haibo, Wang, Xinhua, Wei, Ke, Liu, Jianxun, Zhong, Yaozong, Sun, Qian, Liu, Xinyu
Published in Journal of semiconductors (01.10.2023)

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The application of halide perovskites in memristors

The application of halide perovskites in memristors

by Cao, Gang, Cheng, Chuantong, Zhang, Hengjie, Zhang, Huan, Chen, Run, Huang, Beiju, Yan, Xiaobing, Pei, Weihua, Chen, Hongda
Published in Journal of semiconductors (01.05.2020)

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Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approaches

Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approaches

by Cai, Yuwei, Zhang, Zhaohao, Zhang, Qingzhu, Xiang, Jinjuan, Xu, Gaobo, Wu, Zhenhua, Gu, Jie, Yin, Huaxiang
Published in Journal of semiconductors (01.11.2021)

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GaN based ultraviolet laser diodes

GaN based ultraviolet laser diodes

by Yang, Jing, Zhao, Degang, Liu, Zongshun, Huang, Yujie, Wang, Baibin, Wang, Xiaowei, Zhang, Yuheng, Zhang, Zhenzhuo, Liang, Feng, Duan, Lihong, Wang, Hai, Shi, Yongsheng
Published in Journal of semiconductors (01.01.2024)

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Growth and characterization of β-Ga2O3 thin films grown on off-angled Al2O3 substrates by metal-organic chemical vapor deposition

Growth and characterization of β-Ga2O3 thin films grown on off-angled Al2O3 substrates by metal-organic chemical vapor deposition

by Zhang, Yabao, Zheng, Jun, Ma, Peipei, Zheng, Xueyi, Liu, Zhi, Zuo, Yuhua, Li, Chuanbo, Cheng, Buwen
Published in Journal of semiconductors (01.09.2022)

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Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

by He, Tianjiang, Liu, Suping, Li, Wei, Zhong, Li, Ma, Xiaoyu, Xiong, Cong, Lin, Nan, Wang, Zhennuo
Published in Journal of semiconductors (01.10.2023)

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A survey of high-speed high-resolution current steering DACs

A survey of high-speed high-resolution current steering DACs

by Li, Xing, Zhou, Lei
Published in Journal of semiconductors (01.11.2020)

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Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis

Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis

by Wu, Hao, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Zhang, Lin, Liu, Xinyu, Zhang, Guoqi
Published in Journal of semiconductors (01.06.2022)

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Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess

Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess

by Shi, Wen, Huang, Sen, Wang, Xinhua, Jiang, Qimeng, Yao, Yixu, Bi, Lan, Li, Yuchen, Deng, Kexin, Fan, Jie, Yin, Haibo, Wei, Ke, Li, Yankui, Shi, Jingyuan, Jiang, Haojie, Li, Junfeng, Liu, Xinyu
Published in Journal of semiconductors (01.09.2021)

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A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC

A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC

by Xu, Wenjing, Chen, Jie, Kuang, Zhangqu, Zhou, Li, Chen, Ming, Zhang, Chengbin
Published in Journal of semiconductors (01.08.2022)

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High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiN x gate insulator for high hole mobility

High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiN x gate insulator for high hole mobility

by Zhu, Liyang, Chen, Kuangli, Ma, Ying, Cai, Yong, Zhou, Chunhua, Li, Zhaoji, Zhang, Bo, Zhou, Qi
Published in Journal of semiconductors (01.08.2023)

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