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Anomalous time-of-flight distributions observed for argon implanted in silicon and resputtered by Ar+-ion bombardment
by
van Veen GN
,
Sanders, FH
,
Dieleman, J
,
van Veen A
,
Oostra, DJ
,
de Vries AE
Published in
Physical review letters
(11.08.1986)
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Journal Article
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physics
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condensed matter: structure, mechanical and thermal properties
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defects and impurities in crystals; microstructure
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doping and impurity implantation in iii-v and ii-vi semiconductors
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exact sciences and technology
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physics
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structure of solids and liquids; crystallography
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English
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