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"v. d. Brekel, C. H. J."
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"v. d. Brekel, C. H. J."
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A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor
by
Eversteyn, F. C.
,
Severin, P. J. W.
,
v
.
d
.
Brekel
,
C
.
H
.
J
.
,
Peek, H. L.
Published in
Journal of the Electrochemical Society
(1970)
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Control of the Deposition of Silicon Nitride Layers by 2537Å Radiation
by
Brekel
,
C
.
H
.
J
.
v
.
d
.
,
Severin, P. J.
Published in
Journal of the Electrochemical Society
(1972)
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Closure to “Discussion of ‘Control of the Deposition of Silicon Nitride Layers by 2537Ā Radiation’ [C. H. J. v. d. Brekel and P. J. Severin (pp. 372–376, Vol. 119, No. 3)]”
by
Brekel
,
C
.
H
.
J
.
v
.
d
.
,
Severin, P. J.
Published in
Journal of the Electrochemical Society
(1973)
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Erratum: “Control of the Deposition of Silicon Nitride Layers by 2537Å Radiation” ‘J. Electrochem. Soc., 119, 372 (1972)’
by
Brekel
,
C
.
H
.
J
.
v
.
d
.
,
Severin, P. J.
Published in
Journal of the Electrochemical Society
(1973)
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IOP_英国物理学会现刊(含NSTL购买的14种刊)
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