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Manufacturing process for new-generation silicon-based solar cell p-n junction

by GAO WENXIU
Year of Publication 01.02.2012

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Patent

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Adaptation of the P-N Junction Burnout Model to Circuit Analysis Codes

by McMurray, L. R., Kleiner, C. T.
Published in IEEE transactions on nuclear science (01.01.1972)

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Journal Article

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Method for forming a p-n junction in silicon carbide

by BALIGA; BANTVAL J, BHATNAGAR; MOHIT, ALOK; DEV
Year of Publication 07.06.1994

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Patent

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Photoelectrical p-n junction modification method of ion implantation type HgCdTe infrared focal plane

by YIN WENTING, YE ZHENHUA, ZHU HAIBIN, LIN CHUN, HUANG JIAN, DING RUIJUN, HE LI, HU XIAONING
Year of Publication 10.08.2011

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Patent

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METHOD FOR INVESTIGATING N-TYPE LAYER OF SEMICONDUCTOR DEVICE COMPRISING P-N JUNCTION STRUCTURE

by KIM, SUN HEE
Year of Publication 23.03.2011

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Patent

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Formation of InGaSa p-n Junction by control of growth temperature

by LEE; EL-HANG, KIM; SEONG-BOCK, RO; JEONG-RAE
Year of Publication 12.01.1999

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Patent

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Process for manufacturing p-n junction of large-area silicon-based solar cell by ion implantation method

by GAO WENXIU
Year of Publication 01.02.2012

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Patent

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Method for manufacturing p-n junction of Ge/Si solar battery by dipping method

by GAO WENXIU, ZHAO BAITONG
Year of Publication 06.10.2010

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Patent

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Method for preparing high performance mercury cadmium telluride p-n junction by ion injection

by LI ZHIFENG, LU WEI, WANG SHAOWEI, CHEN XIAOSHUANG, CHEN GUIBIN
Year of Publication 11.08.2010

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Patent

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Photoelectrical p-n junction modification method of ion implantation type HgCdTe infrared focal plane

by YIN WENTING, YE ZHENHUA, ZHU HAIBIN, LIN CHUN, HUANG JIAN, DING RUIJUN, HE LI, HU XIAONING
Year of Publication 16.06.2010

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Patent

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Method of shaping p-n junction profiles

by WAJDA EDWARD S, DHAKA VIR A
Year of Publication 28.11.1967

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Patent

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METHOD OF MAKING P-N JUNCTION

Year of Publication 23.08.1972

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Patent

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Process applied to single-surface corroded p-n junction or suede structure of crystalline silicon solar cell

by SHEN HUI, FENG CHENGKUN
Year of Publication 18.05.2011

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Patent

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STRUCTURE OF AN ACTIVE REGION OF P-N JUNCTION OF COOLED (T=77 K) InAs PHOTODIODES

by LUKIANENKO VOLODYMYR IVANOVYCH, VOROSCHENKO ANDRII TARASOVYCH, SUKACH ANDRII VASYLIOVYCH, LUTSYSHYN IRYNA HRYHORIVNA, TETIORKIN VOLODYMYR VOLODYMYROVYCH
Year of Publication 25.01.2010

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Patent

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Process of making p-n junction crystals

by FREEDMAN GEORGE
Year of Publication 18.09.1956

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Patent

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Method for investigating n-type layer of semiconductor device comprising p-n junction structure

Year of Publication 22.12.2011

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Patent

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Process of producing silicon ribbon with p-n junction

by ARAI; KENICHI, TAKEUCHI; TOSHIO, TSUYA; NOBORU
Year of Publication 18.06.1985

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Patent

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Method for preparing high performance mercury cadmium telluride p-n junction by ion injection

by LI ZHIFENG, LU WEI, WANG SHAOWEI, CHEN XIAOSHUANG, CHEN GUIBIN
Year of Publication 06.05.2009

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Patent

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Automatic P-N junction formation during growth of a heterojunction

by HOVEL; HAROLD J, CUOMO; JEROME J
Year of Publication 04.03.1975

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Patent

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METHOD OF MAKING A P-N JUNCTION DEVICE

by TAKESHI SAKURAI, ZENPEI TANI
Year of Publication 11.07.1972

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Patent

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