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Field-effect transistor, sensor using it, and production method thereof
MIYATA HIROKATSU, YONEHARA TAKAO, FUKUTANI KAZUHIKO, DEN TOHRU, ISHIDA YOUHEI
Year of Publication 08.06.2006
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Year of Publication 08.06.2006
Patent
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Fractal nature of resitance of the drain-dopped channel of the GaN-based heterostructure of the field effect transistor with bidimensional electron gas
Torkhov, N A, Bozhkov, V G
Published in KryMiKo 2010 CriMiCo : 2010 20th International Crimean Conference : Microwave & Telecommunication Technology : conference proceedings : September 13-17, 2010, Sevastopol, Crimea, Ukraine (01.09.2010)
Published in KryMiKo 2010 CriMiCo : 2010 20th International Crimean Conference : Microwave & Telecommunication Technology : conference proceedings : September 13-17, 2010, Sevastopol, Crimea, Ukraine (01.09.2010)
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Conference Proceeding
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Contact Modulation Using Pulsed Thermal Annealing in 2-Dimensional Semiconductors
Alolaiyan, Olaiyan, Alhazmi, Abrar, Alghamdi, Saeed, Alamri, Faisal, Alhamdan, Khalid, Alsulami, Awsaf, Amer, Moh. R.
Published in 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) (12.12.2021)
Published in 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) (12.12.2021)
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Conference Proceeding
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A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors
Wang, Zhen, Wang, Peng, Wang, Fang, Ye, Jiafu, He, Ting, Wu, Feng, Peng, Meng, Wu, Peisong, Chen, Yunfeng, Zhong, Fang, Xie, Runzhang, Cui, Zhuangzhuang, Shen, Liang, Zhang, Qinghua, Gu, Lin, Luo, Man, Wang, Yang, Chen, Huawei, Zhou, Peng, Pan, Anlian, Zhou, Xiaohao, Zhang, Lili, Hu, Weida
Published in Advanced functional materials (01.01.2020)
Published in Advanced functional materials (01.01.2020)
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Journal Article
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FIELD-EFFECT TRANSISTOR, SENSOR USING IT, AND PRODUCTION METHOD THEREOF
YONEHARA, TAKAO, ISHIDA, YOHEI, DEN, TOHRU, MIYATA, HIROKATSU, FUKUTANI, KAZUHIKO
Year of Publication 17.02.2005
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Year of Publication 17.02.2005
Patent
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POWER SEMICONDUCTOR FIELD EFFECT TRANSISTOR STRUCTURE WITH CHARGE TRAPPING MATERIAL IN THE GATE DIELECTRIC
Year of Publication 20.12.2011
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Patent