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Interplay Between Process-Induced and Statistical Variability in 14-nm CMOS Technology Double-Gate SOI FinFETs

by Xingsheng Wang, Binjie Cheng, Brown, Andrew Robert, Millar, Campbell, Kuang, Jente B., Nassif, Sani, Asenov, Asen
Published in IEEE transactions on electron devices (01.08.2013)

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Performance analysis of long Ge channel double gate (DG) p MOSFETs with high- k gate dielectrics based on carrier concentration formulation

by Bhattacherjee, Swagata, Biswas, Abhijit
Published in Microelectronics and reliability (01.06.2011)

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Materials and device structures for sub-32 nm CMOS nodes

by Skotnicki, Thomas
Published in Microelectronic engineering (01.09.2007)

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Journal Article Conference Proceeding

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Discriminating sonic detection system

by FARACE; JOSEPH N, SKOURES; ALEXANDER E
Year of Publication 04.05.1976

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Patent

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Characterization of electron transport at high fields in silicon-on-insulator devices: a Monte Carlo study

by ROLDAN, J. B, GAMIZ, F, ROLDAN, A, RODRIGUEZ, N
Published in Semiconductor science and technology (01.01.2006)

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Journal Article

Interplay Between Process-Induced and Statistical Variability in 14-nm CMOS Technology Double-Gate SOI FinFETs

Performance analysis of long Ge channel double gate (DG) p MOSFETs with high- k gate dielectrics based on carrier concentration formulation

Materials and device structures for sub-32 nm CMOS nodes

Discriminating sonic detection system

Characterization of electron transport at high fields in silicon-on-insulator devices: a Monte Carlo study

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