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Correlation study between LeTID defect density, hydrogen and firing profile in Ga-doped crystalline silicon
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The photoelastic coefficient P 12 of H + implanted GaAs as a function of defect density
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The photoelastic coefficient P12 of H+ implanted GaAs as a function of defect density
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The photoelastic coefficient $${P}_{12}$$ of H+ implanted GaAs as a function of defect density
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Published in Scientific reports (09.11.2017)
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The photoelastic coefficient \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${P}_{12}$$\end{document}P12 of H+ implanted GaAs as a function of defect density
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Published in Scientific reports (09.11.2017)
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Semi-polar (11–22) AlN epitaxial films on m-plane sapphire substrates with greatly improved crystalline quality obtained by high-temperature annealing
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Reducing the Metal–Graphene Contact Resistance through Laser-Induced Defects
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METHOD OF MANUFACTURING SILICON SEMICONDUCTOR WAFER HAVING LOW DEFECT DENSITY
KROTTENTHALER PETER, WAHLICH REINHOLD, LAMBERT ULRICH, VON AMMON WILFRIED, GRAEF DIETER
Year of Publication 03.03.2011
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Year of Publication 03.03.2011
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Semiconductor heterostructure including a substantially relaxed, low defect density SiGe layer
FOGEL KEITH E, CHEN HUAJIE, BEDELL STEPHEN W, DOMENICUCCI ANTHONY G, SADANA DEVENDRA K
Year of Publication 24.03.2009
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Year of Publication 24.03.2009
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METHOD FOR MANUFACTURING SILICON SEMICONDUCTOR WAFER HAVING LOW DEFECT DENSITY
KROTTENTHALER PETER, WAHLICH REINHOLD, LAMBERT ULRICH, VON AMMON WILFRIED, GRAEF DIETER
Year of Publication 24.11.2006
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Year of Publication 24.11.2006
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