Effect of postgrowth processing technology and laser radiation parameters at wavelengths of 2091 and 1064 nm on the laser-induced damage threshold in ZnGeP 2 single crystal
Yudin, N.N., Antipov, O.L., Gribenyukov, A.I., Eranov, I.D., Podzyvalov, S.N., Zinoviev, M.M., Voronin, L.A., Zhuravleva, E.V., Zykova, M.P.
Published in Quantum electronics (Woodbury, N.Y.) (01.04.2021)
Published in Quantum electronics (Woodbury, N.Y.) (01.04.2021)
Get full text
Journal Article
VISUALIZATION AND CHARACTERIZATION OF PREBREAKDOWN PROCESSES IN THE VOLUME OF A ZnGe[P.sub.2] SINGLE CRYSTAL DURING PARAMETRIC GENERATION OF RADIATION IN THE WAVELENGTH RANGE OF 3.5-5 WHEN PUMPED BY Ho:YAG LASER RADIATION
Yudin, N.N, Vlasov, D.V, Antipov, O.L, Gribenyukov, A.I, Zinoviev, M.M, Podzyvalov, S.N, Slyunko, E.S, Yudin, N.A, Kulesh, M.M, Kuznetsov, V.S, Dyomin, V.V
Published in Russian physics journal (01.04.2023)
Published in Russian physics journal (01.04.2023)
Get full text
Journal Article
Effect of postgrowth processing technology and laser radiation parameters at wavelengths of 2091 and 1064 nm on the laser-induced damage threshold in ZnGeP2 single crystal
Yudin, N N, Antipov, O L, AI Gribenyukov, Eranov, I D, Podzyvalov, S N, Zinoviev, M M, Voronin, LA, Zhuravleva, E V, Zykova, M P
Published in Quantum electronics (Woodbury, N.Y.) (01.04.2021)
Published in Quantum electronics (Woodbury, N.Y.) (01.04.2021)
Get full text
Journal Article
INFLUENCE OF POSTGROWTH PROCESSING TECHNOLOGY ON THE LASER INDUCED DAMAGE THRESHOLD OF ZnGe[P.sub.2] SINGLE CRYSTAL
Yudin, N.N, Antipov, O.L, Gribenyukov, A.I, Dyomin, V.V, Zinoviev, M.M, Podzyvalov, S.N, Slyunko, E.S, Zhuravleva, E.V, Pfeif, A.A, Yudin, N.A, Kulesh, M.M, Moskvichev, E.N
Published in Russian physics journal (01.03.2022)
Published in Russian physics journal (01.03.2022)
Get full text
Journal Article