A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration
Minixhofer, R, Feilchenfeld, N, Knaipp, M, Röhrer, G, Park, J M, Zierak, M, Enichlmair, H, Levy, M, Loeffler, B, Hershberger, D, Unterleitner, F, Gautsch, M, Chatty, K, Shi, Y, Posch, W, Seebacher, E, Schrems, M, Dunn, J, Harame, D
Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
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Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
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MRI and clinical activity in MS patients after terminating treatment with interferon beta-1b
RICHERT, N. D, ZIERAK, M. C, BASH, C. N, LEWIS, B. K, MCFARLAND, H. F, FRANK, J. A
Published in Multiple sclerosis (01.04.2000)
Published in Multiple sclerosis (01.04.2000)
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Latchup in merged triple well structure
Voldman, S., Gebreselasie, E., Zierak, M., Hershberger, D., Collins, D., Feilchenfeld, N., St Onge, S., Dunn, J.
Published in 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual (2005)
Published in 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual (2005)
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Foundation of rf CMOS and SiGe BiCMOS technologies
Dunn, James S, Ahlgren, David C, Coolbaugh, Douglas D, Feilchenfeld, Natalie B
Published in IBM journal of research and development (01.03.2003)
Published in IBM journal of research and development (01.03.2003)
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Journal Article
A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, fT/fMAX of 15/14 GHz VPNP, and fT/fMAX of 60/125 GHz HBT
Candra, P., Dahlstrom, M., Zierak, M., Voegeli, B., Watson, K., Gray, P., He, Z.X., Rassel, R.M., Von Bruns, S., Schmidt, N., Camillo-Castillo, R., Previty-Kelly, R., Gautsch, M., Norris, A., Gordon, M., Chapman, P., Hershberger, D., Lukaitis, J., Feilchenfeld, N., Joseph, A., St. Onge, S.A., Dunn, J.
Published in 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2008)
Published in 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2008)
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Conference Proceeding
Foundation of rf CMOS and SiGe BiCMOS technology technologies
Dunn, J S, Ahlgren, D C, Coolbaugh, D D, Feilchenfeld, N B, Freeman, G, Greenberg, D R, Groves, R A, Guarin, F J, Hammad, Y, Joseph, A J, Lanzerotti, L D, St Onge, S A, Orner, B A, Rieh, J-S, Stein, K J, Voldman, S H, Wang, P-C, Zierak, M J, Subbanna, S
Published in IBM journal of research and development (01.03.2003)
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Published in IBM journal of research and development (01.03.2003)
Journal Article
High performance, low complexity 0.18 /spl mu/m SiGe BiCMOS technology for wireless circuit applications
Feilchenfeld, N., Lanzerotti, L., Sheridan, D., Wuthrich, R., Geiss, P., Coolbaugh, D., Gray, P., He, J., Demag, P., Greco, J., Larsen, T., Patel, V., Zierak, M., Hodge, W., Rascoe, J., Trappasso, J., Orner, B., Norris, A., Hershberger, D., Voegeli, B., Voldman, S., Rassel, R., Ramachandrian, V., Gautsch, M., Eshun, E., Hussain, R., Jordan, D., St Onge, S., Dunn, J.
Published in Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (2002)
Published in Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (2002)
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Conference Proceeding
High performance, low complexity 0.18 um SiGe BiCMOS technology for wireless circuit applications
FEILCHENFELD, N, LANZEROTTI, L, LARSEN, T, PATEL, V, ZIERAK, M, HODGE, W, RASCOE, J, TRAPPASSO, J, ORNER, B, NORRIS, A, HERSHBERGER, D, VOEGELI, B, SHERIDAN, D, VOLDMAN, S, RASSEL, R, RAMACHANDRIAN, V, GAUTSCH, M, ESHUN, E, HUSSAIN, R, JORDAN, D, ONGE, S. St, DUNN, J, WUTHRICH, R, GEISS, P, COOLBAUGH, D, GRAY, P, HE, J, DEMAG, P, GRECO, J
Year of Publication 2002
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Year of Publication 2002
Conference Proceeding
A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect
Joseph, A., Coolbaugh, D., Zierak, M., Wuthrich, R., Geiss, P., He, Z., Liu, X., Orner, B., Johnson, J., Freeman, G., Ahlgren, D., Jagannathan, B., Lanzerotti, L., Ramachandran, V., Malinowski, J., Chen, H., Chu, J., Gray, P., Johnson, R., Dunn, J., Subbanna, S., Schonenberg, K., Harame, D., Groves, R., Watson, K., Jadus, D., Meghelli, M., Rylyakov, A.
Published in Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212) (2001)
Published in Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212) (2001)
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Conference Proceeding
A 0.24 /spl mu/m SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz f/sub t/ HBT and 0.18 /spl mu/m L/sub ett/ CMOS
St. Onge, S.A., Harame, D.L., Dunn, J.S., Subbanna, S., Ahlgren, D.C., Freeman, G., Jagannathan, B., Jeng, J., Schonenberg, K., Stein, K., Groves, R., Coolbaugh, D., Feilchenfeld, N., Geiss, P., Gordon, M., Gray, P., Hershberger, D., Kilpatrick, S., Johnson, R., Joseph, A., Lanzerotti, L., Malinowski, J., Orner, B., Zierak, M.
Published in Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) (1999)
Published in Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) (1999)
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Conference Proceeding
1.8 million transistor CMOS ASIC fabricated in a SiGe BiCMOS technology
Johnson, R.A., Zierak, M.J., Outama, K.B., Bahn, T.C., Joseph, A.J., Cordero, C.N., Malinowski, J., Bard, K.A., Weeks, T.W., Milliken, R.A., Medve, T.J., May, G.A., Chong, W., Walter, K.M., Tempest, S.L., Chau, B.B., Boenke, M., Nelson, M.W., Harame, D.L.
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
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