Properties of GaSb-based LEDs with grid ohmic contacts
Imenkov, A. N., Grebenshchikova, E. A., Zhurtanov, B. E., Danilova, T. N., Sipovskaya, M. A., Vlasenko, N. V., Yakovlev, Yu. P.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2004)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2004)
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Journal Article
Transformation of a short-wavelength emission band of a double-charged intrinsic acceptor into a long-wavelength band in GaSb-based LEDs
Grebenshchikova, E. A., Imenkov, A. N., Zhurtanov, B. E., Danilova, T. N., Sipovskaya, M. A., Blasenko, N. V., Yakovlev, Yu. P.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2004)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2004)
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Journal Article
High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier
Petukhov, A. A., Zhurtanov, B. E., Kalinina, K. V., Stoyanov, N. D., Salikhov, H. M., Mikhailova, M. P., Yakovlev, Yu. P.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2013)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2013)
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AlGaAsSb lasers emitting in the 1.6 μm region
Danilova, T. N., Zhurtanov, B. E., Imenkov, A. N., Sipovskaya, M. A., Yakovlev, Yu. P.
Published in Technical physics letters (01.05.1999)
Published in Technical physics letters (01.05.1999)
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Investigation of spontaneous and coherent radiation in the 3–4 μm wavelength range in an InGaAsSb/AlGaSbAs laser heterostructure
Grebenshchikova, E. A., Ershov, O. G., Zhurtanov, B. E., Imenkov, A. N., Kolchanova, N. M., Yakovlev, Yu. P.
Published in Technical physics letters (01.11.1997)
Published in Technical physics letters (01.11.1997)
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Photodiodes based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures grown using rare-earth elements for the 1.1–2.4 μm spectral range
Imenkov, A. N., Zhurtanov, B. E., Astakhova, A. P., Kalinina, K. V., Mikhailova, M. P., Sipovskaya, M. A., Stoyanov, N. D.
Published in Technical physics letters (2009)
Published in Technical physics letters (2009)
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Low-noise photodiodes based on GaSb/GaInAsSb/AlGaAsSb double heterostructures for the 1–4.8 μm spectral range
Zhurtanov, B. E., Il’inskaya, N. D., Imenkov, A. N., Mikhaĭlova, M. P., Kalinina, K. V., Sipovskaya, M. A., Stoyanov, N. D., Yakovlev, Yu. P.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2008)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2008)
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Improving parameters of GaSb/GaInAsSb/AlGaAsSb photodiode structures with thin active regions for the 1.0–2.5 μm wavelength range
Astakhova, A. P., Zhurtanov, B. E., Imenkov, A. N., Mikhailova, M. P., Sipovskaya, M. A., Stoyanov, N. D., Yakovlev, Yu. P.
Published in Technical physics letters (01.10.2007)
Published in Technical physics letters (01.10.2007)
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Journal Article
Impact-ionization-stimulated electroluminescence in isotype n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures
Bazhenov, N. L., Zhurtanov, B. E., Mynbaev, K. D., Astakhova, A. P., Imenkov, A. N., Mikhaĭlova, M. P., Smirnov, V. A., Stoyanov, N. D., Yakovlev, Yu. P.
Published in Technical physics letters (01.12.2007)
Published in Technical physics letters (01.12.2007)
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Journal Article
High-power light-emitting diodes operating in the 1.9 to 2.1-µm spectral range
Danilova, T. N., Zhurtanov, B. E., Zakgeim, A. L., Il’inskaya, N. D., Imenkov, A. N., Saraev, O. N., Sipovskaya, M. A., Sherstnev, V. V., Yakovlev, Yu. P.
Published in Semiconductors (Woodbury, N.Y.) (01.02.1999)
Published in Semiconductors (Woodbury, N.Y.) (01.02.1999)
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