Thin film ferroelectric photonic-electronic memory
Zhang, Gong, Chen, Yue, Zheng, Zijie, Shao, Rui, Zhou, Jiuren, Zhou, Zuopu, Jiao, Leming, Zhang, Jishen, Wang, Haibo, Kong, Qiwen, Sun, Chen, Ni, Kai, Wu, Jixuan, Chen, Jiezhi, Gong, Xiao
Published in Light, science & applications (23.08.2024)
Published in Light, science & applications (23.08.2024)
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Journal Article
Inversion-Type Ferroelectric Capacitive Memory and Its 1-Kbit Crossbar Array
Zhou, Zuopu, Jiao, Leming, Zhou, Jiuren, Zheng, Zijie, Chen, Yue, Han, Kaizhen, Kang, Yuye, Gong, Xiao
Published in IEEE transactions on electron devices (01.04.2023)
Published in IEEE transactions on electron devices (01.04.2023)
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Journal Article
Investigation of Charge Trapping Aggravation Induced by Antiferroelectric Switching With a Unified Ferroelectric and Antiferroelectric Model
Zhou, Zuopu, Jiao, Leming, Zheng, Zijie, Wang, Xiaolin, Zhang, Dong, Ni, Kai, Gong, Xiao
Published in IEEE transactions on electron devices (01.08.2024)
Published in IEEE transactions on electron devices (01.08.2024)
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Journal Article
Demonstration of Ferroelectricity in Al-Doped HfO₂ With a Low Thermal Budget of 500 °C
Zhou, Jiuren, Zhou, Zuopu, Wang, Xinke, Wang, Haibo, Sun, Chen, Han, Kaizhen, Kang, Yuye, Gong, Xiao
Published in IEEE electron device letters (01.07.2020)
Published in IEEE electron device letters (01.07.2020)
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Journal Article
Comprehensive Experiments and Modeling Applicable for Ferroelectric Transistors With an MFMIS Structure and a Wide Range of Area Ratios: Unveiling the Operation Mechanisms
Wang, Xiaolin, Sun, Chen, Zheng, Zijie, Jiao, Leming, Zhou, Zuopu, Zhang, Dong, Liu, Gan, Gong, Xiao
Published in IEEE transactions on electron devices (01.09.2024)
Published in IEEE transactions on electron devices (01.09.2024)
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Journal Article
A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOₓ Ferroelectric Film
Zhou, Zuopu, Zhou, Jiuren, Wang, Xinke, Wang, Haibo, Sun, Chen, Han, Kaizhen, Kang, Yuye, Zheng, Zijie, Ni, Haotian, Gong, Xiao
Published in IEEE electron device letters (01.12.2020)
Published in IEEE electron device letters (01.12.2020)
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Journal Article
A 6.5 nm thick anti-ferroelectric HfAlO x film for energy storage devices with a high density of 63.7 J cm−3
Zhou, Jiuren, Kang, Yuye, Wang, Xinke, Zhou, Zuopu, Ni, Haotian, Jiao, Leming, Zheng, Zijie, Gong, Xiao
Published in Journal of physics. D, Applied physics (06.01.2022)
Published in Journal of physics. D, Applied physics (06.01.2022)
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Journal Article
BEOL-Compatible MFMIS Ferroelectric/ Anti-ferroelectric FETs-Part II: Mechanism With Load Line Analysis and Scaling Strategy
Zheng, Zijie, Zhang, Dong, Jiao, Leming, Sun, Chen, Zhou, Zuopu, Chen, Yue, Kong, Qiwen, Wang, Xiaolin, Liu, Gan, Ni, Kai, Gong, Xiao
Published in IEEE transactions on electron devices (01.09.2024)
Published in IEEE transactions on electron devices (01.09.2024)
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Journal Article
Discovering the Impact of Cooling Scheme During Annealing: A New Knob for Achieving Thermally Stable IGZO FETs
Kong, Qiwen, Liu, Long, Han, Kaizhen, Sun, Chen, Jiao, Leming, Zhou, Zuopu, Zheng, Zijie, Liu, Gan, Xu, Haiwen, Zhang, Jishen, Chen, Yue, Gong, Xiao
Published in IEEE transactions on electron devices (01.09.2024)
Published in IEEE transactions on electron devices (01.09.2024)
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Journal Article
Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs
Kang, Yuye, Han, Kaizhen, Kumar, Annie, Wang, Chengkuan, Sun, Chen, Zhou, Zuopu, Zhou, Jiuren, Gong, Xiao
Published in IEEE electron device letters (01.10.2021)
Published in IEEE electron device letters (01.10.2021)
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Journal Article
BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs-Part I: Experimental Results With Boosted Memory Window
Zheng, Zijie, Jiao, Leming, Zhang, Dong, Sun, Chen, Zhou, Zuopu, Wang, Xiaolin, Liu, Gan, Kong, Qiwen, Chen, Yue, Ni, Kai, Gong, Xiao
Published in IEEE transactions on electron devices (01.03.2024)
Published in IEEE transactions on electron devices (01.03.2024)
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Journal Article
Temperature Dependence of Ferroelectricity in Al-Doped HfO 2 Featuring a High P r of 23.7 μC/cm 2
Zhou, Jiuren, Zhou, Zuopu, Wang, Xinke, Wang, Haibo, Sun, Chen, Han, Kaizhen, Kang, Yuye, Gong, Xiao
Published in IEEE transactions on electron devices (01.12.2020)
Published in IEEE transactions on electron devices (01.12.2020)
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Journal Article
Temperature Dependence of Ferroelectricity in Al-Doped HfO2 Featuring a High Pr of 23.7 μC/cm2
Zhou, Jiuren, Zhou, Zuopu, Wang, Xinke, Wang, Haibo, Sun, Chen, Han, Kaizhen, Kang, Yuye, Gong, Xiao
Published in IEEE transactions on electron devices (01.12.2020)
Published in IEEE transactions on electron devices (01.12.2020)
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Journal Article
Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling With Dynamic Response and Multi-Domain Characteristics
Zhou, Zuopu, Jiao, Leming, Zhou, Jiuren, Kong, Qiwen, Luo, Sheng, Sun, Chen, Zheng, Zijie, Wang, Xiaolin, Zhang, Dong, Liu, Gan, Liang, Gengchiau, Gong, Xiao
Published in IEEE electron device letters (01.01.2022)
Published in IEEE electron device letters (01.01.2022)
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Journal Article
Hydrogen-Related Instability of IGZO Field-Effect Transistors
Liu, Gan, Kong, Qiwen, Zhang, Dong, Wang, Xiaolin, Zhou, Zuopu, Jiao, Leming, Han, Kaizhen, Kang, Yuye, Nguyen, Bich-Yen, Ni, Kai, Gong, Xiao
Published in IEEE transactions on electron devices (01.05.2024)
Published in IEEE transactions on electron devices (01.05.2024)
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Journal Article
Temperature Dependence of Ferroelectricity in Al-Doped HfO2 Featuring a High P r of 23.7 μC/cm2
Zhou, Jiuren, Zhou, Zuopu, Wang, Xinke, Wang, Haibo, Chen, Sun, Han, Kaizhen, Kang, Yuye, Gong, Xiao
Published in IEEE transactions on electron devices (01.01.2020)
Published in IEEE transactions on electron devices (01.01.2020)
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Journal Article
Grain Size Reduction of Ferroelectric HZO Enabled by Solid Phase Epitaxy (SPE): Working Principle, Experimental Demonstration, and Theoretical Understanding
Zhang, Dong, Wu, Jixuan, Kong, Qiwen, Zheng, Zijie, Zhou, Zuopu, Liu, Long, Han, Kaizhen, Sun, Chen, Wang, Xiaolin, Liu, Gan, Jiao, Leming, Kang, Yuye, Zheng, Gerui, Chen, Jiezhi, Gong, Xiao
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors
Kong, Qiwen, Liu, Long, Zheng, Zijie, Sun, Chen, Zhou, Zuopu, Jiao, Leming, Kumar, Annie, Shao, Rui, Zhang, Jishen, Xu, Haiwen, Chen, Yue, Nguyen, Bich-Yen, Gong, Xiao
Published in IEEE transactions on electron devices (01.04.2023)
Published in IEEE transactions on electron devices (01.04.2023)
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Journal Article
First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack
Zhou, Zuopu, Jiao, Leming, Zheng, Zijie, Wang, Xiaolin, Zhang, Dong, Ni, Kai, Gong, Xiao
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlO ₓ Ferroelectric Film
Zhou, Zuopu, Zhou, Jiuren, Wang, Xinke, Wang, Haibo, Sun, Chen, Han, Kaizhen, Kang, Yuye, Zheng, Zijie, Ni, Haotian, Gong, Xiao
Published in IEEE electron device letters (01.12.2020)
Published in IEEE electron device letters (01.12.2020)
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Journal Article