A device-physics-basic SPICE model for PDSOI CMOS SEU
Zihan Fan, Jinshun Bi, Jiajun Luo, Zhengsheng Han
Published in 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (01.11.2010)
Published in 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (01.11.2010)
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Conference Proceeding
Single-event burnout hardening of planar power MOSFET with partially widened trench source Project supported by the National Natural Science Foundation of China (Nos. 61404161, 61404068, 61404169)
Lu, Jiang, Liu, Hainan, Cai, Xiaowu, Luo, Jiajun, Li, Bo, Li, Binhong, Wang, Lixin, Han, Zhengsheng
Published in Journal of semiconductors (01.03.2018)
Published in Journal of semiconductors (01.03.2018)
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Journal Article
A radiation hardened SRAM cell design in PD-SOI CMOS technology
Yiqi Wang, Ying Li, Fazhan Zhao, Mengxin Liu, Zhengsheng Han
Published in 2011 IEEE International Conference of Electron Devices and Solid-State Circuits (01.11.2011)
Published in 2011 IEEE International Conference of Electron Devices and Solid-State Circuits (01.11.2011)
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Conference Proceeding
Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devicesProject supported by the National Natural Science Foundation of China (Grant Nos. 61176095 and 61404169) and the Youth Innovation Promotion Association of Chinese Academy of Sciences
Xie, Bingqing, Li, Bo, Bi, Jinshun, Bu, Jianhui, Wu, Chi, Li, Binhong, Han, Zhengsheng, Luo, Jiajun
Published in Chinese physics B (01.06.2016)
Published in Chinese physics B (01.06.2016)
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Journal Article
A compact model for the STI y-stress effect on deep submicron PDSOI MOSFETs
Jianhui Bu, Jinshun Bi, Xianjun Ma, Jiajun Luo, Zhengsheng Han, Haogang Cai
Published in 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (01.10.2012)
Published in 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (01.10.2012)
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Conference Proceeding
Radiation hardness and abnormal photoresponse dynamics of the CHNHPbI perovskite photodetector
Xiong, Guodong, Qin, Zilun, Li, Bo, Wang, Lei, Zhang, Xuewen, Zheng, Zhongshan, Zhu, Huiping, Zhao, Suling, Gao, Jiantou, Li, Binhong, Yang, Jianqun, Li, Xingji, Luo, Jiajun, Han, Zhengsheng, Liu, Xinyu, Zhao, Fazhan
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (23.02.2021)
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (23.02.2021)
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Journal Article
Radiation hardness and abnormal photoresponse dynamics of the CH 3 NH 3 PbI 3 perovskite photodetector
Xiong, Guodong, Qin, Zilun, Li, Bo, Wang, Lei, Zhang, Xuewen, Zheng, Zhongshan, Zhu, Huiping, Zhao, Suling, Gao, Jiantou, Li, Binhong, Yang, Jianqun, Li, Xingji, Luo, Jiajun, Han, Zhengsheng, Liu, Xinyu, Zhao, Fazhan
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (23.02.2021)
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (23.02.2021)
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Journal Article
A bias dependent body resistance model for deep submicron PDSOI technology
Jianhui Bu, Jinshun Bi, Mengxin Liu, Haogang Cai, Zhengsheng Han
Published in 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (01.11.2010)
Published in 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (01.11.2010)
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Conference Proceeding
The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation
Zheng, Zhongshan, Ning, Jin, Zhang, Baiqiang, Liu, Zhongli, Luo, Jiajun, Han, Zhengsheng
Published in Science China materials (01.08.2016)
Published in Science China materials (01.08.2016)
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Journal Article
Influence of back-gate stress on the back-gate threshold voltage of a LOCOS-isolated SOIMOSFET
Mei, Bo, Bi, Jinshun, Li, Duoli, Liu, Sinan, Han, Zhengsheng
Published in Journal of semiconductors (01.02.2012)
Published in Journal of semiconductors (01.02.2012)
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Journal Article
Model Parameters Extraction of SOI MOSFETs
Li Ruizhen, Li Duoli, Du Huan, Hai Chaohe, Han Zhengsheng
Published in 2006 International Workshop on Junction Technology (2006)
Published in 2006 International Workshop on Junction Technology (2006)
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Conference Proceeding
High-voltage CMOS process for field emission display drivers
Hua Li, Limei Song, Huan Du, Zhengsheng Han, Chaohe Hai, Yang Xia
Published in 2005 International Vacuum Nanoelectronics Conference (2005)
Published in 2005 International Vacuum Nanoelectronics Conference (2005)
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Conference Proceeding
Radiation-induced Degradation Mechanism in Double-SOI pMOSFETs
Huang, Yang, Liu, Fanyu, Li, Binhong, Li, Bo, Gao, Jiantou, Wang, Lei, Su, Xiaohui, Liu, Hainan, Han, Zhengsheng, Luo, Jiajun
Published in 2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) (01.09.2019)
Published in 2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) (01.09.2019)
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Conference Proceeding
Fundamental Mechanism Analyses of NBTI-Induced Effects on Single-Event Upset Hardness for SRAM Cells
Zheng, Zhongshan, Li, Zhentao, Li, Bo, Luo, Jiajun, Han, Zhengsheng, Liu, Xinyu
Published in 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (20.07.2020)
Published in 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (20.07.2020)
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Conference Proceeding