High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer
Hu, Shiben, Lu, Kuankuan, Ning, Honglong, Zheng, Zeke, Zhang, Hongke, Fang, Zhiqiang, Yao, Rihui, Xu, Miao, Wang, Lei, Lan, Linfeng, Peng, Junbiao, Lu, Xubing
Published in IEEE electron device letters (01.07.2017)
Published in IEEE electron device letters (01.07.2017)
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Journal Article
A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO₂ Gate Insulator TFT with a High Concentration Precursor
Cai, Wei, Zhu, Zhennan, Wei, Jinglin, Fang, Zhiqiang, Ning, Honglong, Zheng, Zeke, Zhou, Shangxiong, Yao, Rihui, Peng, Junbiao, Lu, Xubing
Published in Materials (21.08.2017)
Published in Materials (21.08.2017)
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Journal Article
High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al₂O₃ Nanolaminate Structure Processed at Room Temperature
Yao, Rihui, Li, Xiaoqing, Zheng, Zeke, Zhang, Xiaochen, Xiong, Mei, Xiao, Song, Ning, Honglong, Wang, Xiaofeng, Wu, Yuxiang, Peng, Junbiao
Published in Materials (01.10.2018)
Published in Materials (01.10.2018)
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Journal Article
All-Aluminum Thin Film Transistor Fabrication at Room Temperature
Yao, Rihui, Zheng, Zeke, Zeng, Yong, Liu, Xianzhe, Ning, Honglong, Hu, Shiben, Tao, Ruiqiang, Chen, Jianqiu, Cai, Wei, Xu, Miao, Wang, Lei, Lan, Linfeng, Peng, Junbiao
Published in Materials (23.02.2017)
Published in Materials (23.02.2017)
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Journal Article
Amorphous InGaZnO Thin Film Transistor Fabricated with Printed Silver Salt Ink Source/Drain Electrodes
Yang, Caigui, Fang, Zhiqiang, Ning, Honglong, Tao, Ruiqiang, Chen, Jianqiu, Zhou, Yicong, Zheng, Zeke, Yao, Rihui, Wang, Lei, Peng, Junbiao, Song, Yongsheng
Published in Applied sciences (16.08.2017)
Published in Applied sciences (16.08.2017)
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Journal Article
Room-Temperature Fabrication of High-Performance Amorphous In–Ga–Zn–O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper
Ning, Honglong, Zeng, Yong, Kuang, Yudi, Zheng, Zeke, Zhou, Panpan, Yao, Rihui, Zhang, Hongke, Bao, Wenzhong, Chen, Gang, Fang, Zhiqiang, Peng, Junbiao
Published in ACS applied materials & interfaces (23.08.2017)
Published in ACS applied materials & interfaces (23.08.2017)
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Journal Article
Direct patterning of silver electrodes with 2.4μm channel length by piezoelectric inkjet printing
Ning, Honglong, Tao, Ruiqiang, Fang, Zhiqiang, Cai, Wei, Chen, Jianqiu, Zhou, Yicong, Zhu, Zhennan, Zheng, Zeke, Yao, Rihui, Xu, Miao, Wang, Lei, Lan, Linfeng, Peng, Junbiao
Published in Journal of colloid and interface science (01.02.2017)
Published in Journal of colloid and interface science (01.02.2017)
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Journal Article
High-performance flexible oxide TFTs: optimization of a-IGZO film by modulating the voltage waveform of pulse DC magnetron sputtering without post treatment
Yao, Rihui, Zheng, Zeke, Fang, Zhiqiang, Zhang, Hongke, Zhang, Xiaochen, Ning, Honglong, Wang, Lei, Peng, Junbiao, Xie, Weiguang, Lu, Xubing
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (2018)
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (2018)
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Journal Article
Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer
Ning, Honglong, Zeng, Yong, Zheng, Zeke, Zhang, Hongke, Fang, Zhiqiang, Yao, Rihui, Hu, Shiben, Li, Xiaoqing, Peng, Junbiao, Xie, Weiguang, Lu, Xubing
Published in IEEE transactions on electron devices (01.02.2018)
Published in IEEE transactions on electron devices (01.02.2018)
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Journal Article
High conductivity and transparent aluminum-based multi-layer source/drain electrodes for thin film transistors
Yao, Rihui, Zhang, Hongke, Fang, Zhiqiang, Ning, Honglong, Zheng, Zeke, Li, Xiaoqing, Zhang, Xiaochen, Cai, Wei, Lu, Xubing, Peng, Junbiao
Published in Journal of physics. D, Applied physics (14.02.2018)
Published in Journal of physics. D, Applied physics (14.02.2018)
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Journal Article
A novel nondestructive testing method for amorphous Si-Sn-O films
Liu, Xianzhe, Cai, Wei, Chen, Jianqiu, Fang, Zhiqiang, Ning, Honglong, Hu, Shiben, Tao, Ruiqiang, Zeng, Yong, Zheng, Zeke, Yao, Rihui, Xu, Miao, Wang, Lei, Lan, Linfeng, Peng, Junbiao
Published in Journal of physics. D, Applied physics (21.12.2016)
Published in Journal of physics. D, Applied physics (21.12.2016)
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Journal Article
Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al 2 O 3 Passivation Layer
Ning, Honglong, Zeng, Yong, Zheng, Zeke, Zhang, Hongke, Fang, Zhiqiang, Yao, Rihui, Hu, Shiben, Li, Xiaoqing, Peng, Junbiao, Xie, Weiguang, Lu, Xubing
Published in IEEE transactions on electron devices (01.02.2018)
Published in IEEE transactions on electron devices (01.02.2018)
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Journal Article
Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al 2 O 3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper
Ning, Honglong, Zeng, Yong, Kuang, Yudi, Zheng, Zeke, Zhou, Panpan, Yao, Rihui, Zhang, Hongke, Bao, Wenzhong, Chen, Gang, Fang, Zhiqiang, Peng, Junbiao
Published in ACS applied materials & interfaces (23.08.2017)
Published in ACS applied materials & interfaces (23.08.2017)
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Journal Article
Island‐Like AZO/Al2O3 Bilayer Channel Structure for Thin Film Transistors
Zeng, Yong, Ning, Honglong, Zheng, Zeke, Zhang, Hongke, Fang, Zhiqiang, Yao, Rihui, Xu, Miao, Wang, Lei, Lan, Linfeng, Peng, Junbiao, Lu, Xubing, Zheng, Yanqiong
Published in Advanced materials interfaces (07.08.2017)
Published in Advanced materials interfaces (07.08.2017)
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Journal Article
High-performance flexible oxide TFTs: optimization of a-IGZO film by modulating the voltage waveform of pulse DC magnetron sputtering without post treatmentElectronic supplementary information (ESI) available: XPS spectra for 50 nm-thick IGZO films sputtered by the modulated waveform; the electrical properties of a-IGZO TFTs and the corresponding IGZO film density; the transfer characteristic curve with a drain voltage of 0.1 V of the flexible IGZO TFT on PI substrate. See DOI: 10.1039/c7tc04970
Yao, Rihui, Zheng, Zeke, Fang, Zhiqiang, Zhang, Hongke, Zhang, Xiaochen, Ning, Honglong, Wang, Lei, Peng, Junbiao, Xie, Weiguang, Lu, Xubing
Year of Publication 08.03.2018
Year of Publication 08.03.2018
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Journal Article
Island‐Like AZO/Al 2 O 3 Bilayer Channel Structure for Thin Film Transistors
Zeng, Yong, Ning, Honglong, Zheng, Zeke, Zhang, Hongke, Fang, Zhiqiang, Yao, Rihui, Xu, Miao, Wang, Lei, Lan, Linfeng, Peng, Junbiao, Lu, Xubing, Zheng, Yanqiong
Published in Advanced materials interfaces (01.08.2017)
Published in Advanced materials interfaces (01.08.2017)
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Journal Article
All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by a fully room temperature processElectronic supplementary information (ESI) available: BF-STEM image and EDS mapping scan of the PDC-IGZO/Al2O3 bi-layer channel region; atomic ratio of In, Ga, and Zn obtained by XPS measurements; AFM images of Al2O3, PDC-IGZO, DC-IGZO and RF-IGZO; XRR result of Al2O3; I-V curves with the leakage current of TFTs; and mobility, Vth and SS value distribution of the PD
Zheng, Zeke, Zeng, Yong, Yao, Rihui, Fang, Zhiqiang, Zhang, Hongke, Hu, Shiben, Li, Xiaoqing, Ning, Honglong, Peng, Junbiao, Xie, Weiguang, Lu, Xubing
Year of Publication 20.07.2017
Year of Publication 20.07.2017
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