Search Results - "Zhdan, A. G." :: K.UTB vyhledávací portál

Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2-n-Si heterostructures

by Zhdan, A. G., Kukharskaya, N. F., Naryshkina, V. G., Chucheva, G. V.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2007)

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Problems of relaxation spectroscopy of localised electron states

by Goldman, E I, Zhdan, A G
Published in Semiconductor science and technology (01.07.1990)

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The effect of imaging forces in ultra thin gate insulator on the tunneling current and its oscillations at the region of transition from the direct tunneling to the Fowler–Nordheim tunneling

by Goldman, E.I., Kukharskaya, N.F., Zhdan, A.G.
Published in Solid-state electronics (01.05.2004)

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Energy dependence of the carrier capture coefficient for neutral shallow impurities in semiconductors

by Dmitriev, S G, Zhdan, A G, Kozlov, A M, Lifshits, T M, Rylkov, V V, Shagimuratov, O G
Published in Semiconductor science and technology (01.04.1993)

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Increase in the Rate and Discretization of the Kinetics of Isothermal Surface Generation of Minority Charge Carriers in Metal–Insulator–Semiconductor Structures with a Planar-Inhomogeneous Insulator

by Zhdan, A. G.
Published in Semiconductors (Woodbury, N.Y.) (2005)

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Determination of the Minority Carrier Surface Thermogeneration Rate in Metal-Oxide-Semiconductor Structures

by Chucheva, G. V., Zhdan, A. G., Akhmedov, G. A., Kukharskaya, N. F.
Published in Instruments and experimental techniques (New York) (01.07.2005)

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Improving the Accuracy in Determining the Insulator Capacitance in Metal–Insulator–Semiconductor Structures

by Zhdan, A. G., Kukharskaya, N. F., Chucheva, G. V.
Published in Instruments and experimental techniques (New York) (01.11.2004)

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Determination of the absolute value of the semiconductor surface potential by the quasi-static capacitance-voltage characteristics of an MIS structure

by Zhdan, A. G., Kukharskaya, N. F., Chucheva, G. V.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2003)

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A new approach to the creation of nanoelectronic systems using a dimensionally-quantized potential relief of charges built into insulating layers on a semiconductor surface

by Gol’dman, E. I., Zhdan, A. G.
Published in Technical physics letters (01.01.2000)

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Hall effect in island-like metal films with high resistance

by Darevsky, A.S., Gulaev, I.B., Vedeneyev, A.S., Zhdan, A.G.
Published in Thin solid films (01.04.1980)

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Conductivity of the insulating (oxide) layer on the surface of a semiconductor caused by electron-ion interaction at the insulator-semiconductor boundary

by Goldman, E. I., Zhdan, A. G., Chucheva, G. V.
Published in Semiconductors (Woodbury, N.Y.) (01.08.1999)

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On the origin of the thermal-field asymmetry in ionic polarization/depolarization of oxide in Si-MOS structures

by Gol’dman, E. I., Zhdan, A. G., Chucheva, G. V.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)

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Free ion transport in the insulator layer and electron-ion exchange at an insulator-semiconductor phase boundary produced as a result of thermally stimulated ionic depolarization of silicon MOS structures

by Gol’dman, E. I., Zhdan, A. G., Chucheva, G. V.
Published in Semiconductors (Woodbury, N.Y.) (01.08.1999)

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Ion neutralization effects at a semiconductor-insulator interface produced as a result of space-charge thermal depolarization of MOS structures

by Goldman, E. I.
Published in Semiconductors (Woodbury, N.Y.) (01.03.1999)

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Kinetics of ion depolarization of Si-MOS structures in the linear voltage sweep regime

by Zhdan, A. G., Goldman, E. I., Chucheva, G. V.
Published in Semiconductors (Woodbury, N.Y.) (01.12.1997)

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Generation of minority charge carriers at the semiconductor surface during thermally activated ionic depolarization of metal-insulator-semiconductor structures

by Gol’dman, E. I., Zhdan, A. G., Kukharskaya, N. F., Chucheva, G. V.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)

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Direct tunneling of electrons in Al-n+-Si-SiO2-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers

by Goldman, E. I., Gulyaev, Yu. V., Zhdan, A. G., Chucheva, G. V.
Published in Semiconductors (Woodbury, N.Y.) (01.08.2010)

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Self-correction of field-effect transistor characteristics in the mode of spontaneous space-charge ion polarization of gate oxide

by Zhdan, A. G., Naryshkina, V. G., Chucheva, G. V.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2009)

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The new approach to the creation of the nonvolatile memory based on Si-MOS-transistors

by Chucheva G. V., Zhdan A. G., Gulyaev Yu. V.
Published in Tekhnologiya i Konstruirovanie v Elektronnoi Apparature (01.06.2011)

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Direct tunneling of electrons in Al-n{sup +}-Si-SiO{sub 2}-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers

by Goldman, E. I., Gulyaev, Yu. V., Zhdan, A. G., Chucheva, G. V.
Published in Semiconductors (Woodbury, N.Y.) (15.08.2010)

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