Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the Defect
Zhao, Ce Z., Zhang, Jian F., Chang, Mo Huai, Peaker, A. R., Hall, Stephen, Groeseneken, Guido, Pantisano, Luigi, De Gendt, Stefan, Heyns, Marc
Published in IEEE transactions on electron devices (01.07.2008)
Published in IEEE transactions on electron devices (01.07.2008)
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Journal Article
Hole traps in silicon dioxides. Part I. Properties
Zhang, J.F., Zhao, C.Z., Chen, A.H., Groeseneken, G., Degraeve, R.
Published in IEEE transactions on electron devices (01.08.2004)
Published in IEEE transactions on electron devices (01.08.2004)
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Journal Article
Hole-traps in silicon dioxides. Part II. Generation mechanism
Zhao, C.Z., Zhang, J.F., Groeseneken, G., Degraeve, R.
Published in IEEE transactions on electron devices (01.08.2004)
Published in IEEE transactions on electron devices (01.08.2004)
Get full text
Journal Article