Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching
Wang, Jiulong, Zhao, Siqi, Yan, Guoguo, Shen, Zhanwei, Zhao, Wanshun, Wang, Lei, Liu, Xingfang
Published in Crystals (Basel) (30.05.2022)
Published in Crystals (Basel) (30.05.2022)
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Journal Article
A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region
Wen, Zhengxin, Zhang, Feng, Shen, Zhanwei, Tian, Lixin, Yan, Guoguo, Liu, Xingfang, Wang, Lei, Zhao, Wanshun, Sun, Guosheng, Zeng, Yiping
Published in IEEE electron device letters (01.07.2017)
Published in IEEE electron device letters (01.07.2017)
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Journal Article
A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics
Wang, Xiaojie, Shen, Zhanwei, Zhang, Guoliang, Miao, Yuyang, Li, Tiange, Zhu, Xiaogang, Cai, Jiafa, Hong, Rongdun, Chen, Xiaping, Lin, Dingqu, Wu, Shaoxiong, Zhang, Yuning, Fu, Deyi, Wu, Zhengyun, Zhang, Feng
Published in Journal of semiconductors (01.12.2022)
Published in Journal of semiconductors (01.12.2022)
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Journal Article
Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET
Tian, Lixin, Du, Zechen, Liu, Rui, Niu, Xiping, Zhang, Wenting, An, Yunlai, Shen, Zhanwei, Yang, Fei, Wei, Xiaoguang
Published in Journal of semiconductors (01.08.2022)
Published in Journal of semiconductors (01.08.2022)
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Journal Article
Prediction of high-density and high-mobility two-dimensional electron gas at AlxGa1−xN/4H-SiC interface
Zhanwei Shen, Feng Zhang, Dimitrijev, Sima, Jisheng Han, Lixin Tian, Guoguo Yan, Zhengxin Wen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Influence of H2 treatment on the surface morphology of SiC with different wafer orientation and doping
Shen, Zhanwei, Zhang, Feng, Liu, Xingfang, Sun, Guosheng, Zeng, Yiping
Published in Journal of crystal growth (01.04.2023)
Published in Journal of crystal growth (01.04.2023)
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Journal Article
PSGformer: A novel multivariate net load forecasting model for the smart grid
Zhang, Qingyong, Zhou, Shiyang, Xu, Bingrong, Shen, Zhanwei, Chang, Wanfeng
Published in Journal of computational science (01.06.2024)
Published in Journal of computational science (01.06.2024)
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Journal Article
Effect of temperature on growth of epitaxial layer on semi-insulating 4H-SiC substrate
Zhao, Siqi, Chen, Junhong, Yang, Shangyu, Yan, Guoguo, Shen, Zhanwei, Zhao, Wanshun, Wang, Lei, Liu, Xingfang, Sun, Guosheng, Zeng, Yiping
Published in Journal of crystal growth (01.02.2023)
Published in Journal of crystal growth (01.02.2023)
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Journal Article
Characterization of epitaxial layers grown on 4H-SiC (0 0 0 −1) substrates
Chen, Junhong, Guan, Min, Yang, Shangyu, Zhao, Siqi, Yan, Guoguo, Shen, Zhanwei, Zhao, Wanshun, Wang, Lei, Liu, Xingfang, Sun, Guosheng, Zeng, Yiping
Published in Journal of crystal growth (15.02.2023)
Published in Journal of crystal growth (15.02.2023)
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Journal Article
Surface flattening of 4H-SiC (0001) epitaxial wafers by high temperature oxidation
Zhao, Siqi, Wang, Jiulong, Yan, Guoguo, Shen, Zhanwei, Zhao, Wanshun, Wang, Lei, Liu, Xingfang, Sun, Guosheng, Zeng, Yiping
Published in Semiconductor science and technology (01.10.2022)
Published in Semiconductor science and technology (01.10.2022)
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Journal Article
High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET
Shen, Zhanwei, Zhang, Feng, Yan, Guoguo, Wen, Zhengxin, Zhao, Wanshun, Wang, Lei, Liu, Xingfang, Sun, Guosheng, Zeng, Yiping
Published in IEEE transactions on electron devices (01.10.2020)
Published in IEEE transactions on electron devices (01.10.2020)
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Journal Article
Growth of 4H-SiC epitaxial layers at temperatures below 1500 °C using trichlorosilane (TCS)
Yang, Shangyu, Zhao, Siqi, Chen, Junhong, Yan, Guoguo, Shen, Zhanwei, Zhao, Wanshun, Wang, Lei, Zhang, Yang, Liu, Xingfang, Sun, Guosheng, Zeng, Yiping
Published in Journal of crystal growth (15.06.2023)
Published in Journal of crystal growth (15.06.2023)
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Journal Article
Effects of gamma-ray irradiation on material and electrical properties of AlN gate dielectric on 4H-SiC
Zhu, Xiaogang, Shen, Zhanwei, Wang, Z J, Liu, Zhengran, Miao, Yuyang, Yue, Shizhong, Fu, Zhao, Li, Zihao, Zhang, Yuning, Hong, Rongdun, Wu, Shaoxiong, Chen, Xiaping, Cai, Jiafa, Fu, Deyi, Zhang, Feng
Published in Nanotechnology (01.07.2024)
Published in Nanotechnology (01.07.2024)
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Journal Article
Effect of Schottky annealing temperature on reverse leakage current of 6500 V 4H-SiC JBS diodes
Niu, Xiping, Wei, Xiaoguang, An, Yunlai, Sang, Ling, Wu, Peifei, Zhou, Yang, Sun, Botao, Zhang, Wenting, Liu, Rui, Du, Zechen, Li, Chenmeng, Shen, Zhanwei, Yang, Tongtong, Luo, Weixia, Tian, Yan, Yang, Fei
Published in Journal of crystal growth (15.04.2023)
Published in Journal of crystal growth (15.04.2023)
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Journal Article
Effects of constant voltage stress on bipolar degradation in 4H-SiC IGBT
An, Yunlai, Zhang, Wenting, Tang, Xinling, Niu, Xiping, Wang, Liang, Yang, Xiaolei, Shen, Zhanwei, Sun, Junmin, Sang, Ling, Liu, Rui, Du, Zechen, Luo, Weixia, Li, Ling, Chen, Zhongyuan, Wei, Xiaoguang, Yang, Fei
Published in Journal of crystal growth (01.03.2023)
Published in Journal of crystal growth (01.03.2023)
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Journal Article
Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling
He, Yawei, Yan, Guoguo, Shen, Zhanwei, Zhao, Wanshun, Wang, Lei, Liu, Xingfang, Sun, Guosheng, Zhang, Feng, Zeng, Yiping
Published in Journal of crystal growth (01.02.2020)
Published in Journal of crystal growth (01.02.2020)
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Journal Article
Surface Uniformity of Wafer-Scale 4H-SiC Epitaxial Layers Grown under Various Epitaxial Conditions
Zhao, Siqi, Wang, Jiulong, Yan, Guoguo, Shen, Zhanwei, Zhao, Wanshun, Wang, Lei, Liu, Xingfang
Published in Coatings (Basel) (01.05.2022)
Published in Coatings (Basel) (01.05.2022)
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Journal Article
The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition
Chen, Jun, Lv, Bowen, Zhang, Feng, Wang, Yinshu, Liu, Xingfang, Yan, Guoguo, Shen, Zhanwei, Wen, Zhengxin, Wang, Lei, Zhao, Wanshun, Sun, Guosheng, Liu, Chao, Zeng, Yiping
Published in Materials science in semiconductor processing (01.05.2019)
Published in Materials science in semiconductor processing (01.05.2019)
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Journal Article
Optimized P-emitter doping for switching-off loss of superjunction 4H-SiC IGBTs
Zhanwei Shen, Feng Zhang, Lixin Tian, Guoguo Yan, Zhengxin Wen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Published in 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) (01.11.2016)
Published in 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) (01.11.2016)
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Conference Proceeding