Fabrication and Characteristics of AlInN/AlN/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric
Mao, Wei (维毛), Zhang, Jin-Cheng (进成 张), Xue, Jun-Shuai (军帅 薛), Hao, Yao (跃郝), Ma, Xiao-Hua (晓华 马), Wang, Chong (冲王), Liu, Hong-Xia (红侠 刘), Xu, Sheng-Rui (晟瑞 许), Yang, Lin-An (林安 杨), Bi, Zhi-Wei (志伟 毕), Liang, Xiao-Zhen (晓祯 梁), Zhang, Jin-Feng (金风 张), Kuang, Xian-Wei (贤伟 匡)
Published in Chinese physics letters (01.12.2010)
Published in Chinese physics letters (01.12.2010)
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