Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs
Rzin, M., Meneghini, M., Rampazzo, F., Zhan, V. Gao, De Santi, C., Kabouche, R., Zegaoui, M., Medjdoub, F., Meneghesso, G., Zanoni, E.
Published in Microelectronics and reliability (01.09.2019)
Published in Microelectronics and reliability (01.09.2019)
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Journal Article
Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates
Graff, A., Simon-Najasek, M., Hübner, S., Lejoyeux, M., Altmann, F., Gao, V. Zhan, Rampazzo, F., Meneghini, M., Zanoni, E., Lambert, B.
Published in Microelectronics and reliability (01.11.2023)
Published in Microelectronics and reliability (01.11.2023)
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Journal Article