Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode
Navarro, Dondee, Herrera, Fernando, Zenitani, Hiroshi, Miura-Mattausch, Mitiko, Yorino, Naoto, Mattausch, Hans Jürgen, Takusagawa, Mamoru, Kobayashi, Jun, Hara, Masafumi
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Journal Article
Analysis of printed organic MOSFET characteristics with a focus on the temperature dependence
Zenitani, Hiroshi, Maiti, Tapas Kumar, Hayashi, Takuro, Tanimoto, Yuta, Sato, Kenshiro, Chen, Lei, Kikuchihara, Hideyuki, Miura-Mattausch, Mitiko, Mattausch, Hans Jürgen
Published in Japanese Journal of Applied Physics (01.04.2016)
Published in Japanese Journal of Applied Physics (01.04.2016)
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Journal Article
Mobility model for advanced SOI-MOSFETs including back-gate contribution
Zenitani, Hiroshi, Kikuchihara, Hideyuki, Feldmann, Uwe, Miyamoto, Hidenori, Mattausch, Hans Jürgen, Miura-Mattausch, Michiko, Nakagawa, Tadashi, Sugii, Nobuyuki
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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Journal Article
Aging simulation of SiC-MOSFET in DC-AC converter
Sato, Kenshiro, Sekizaki, Shinya, Navarro, Dondee, Zoka, Yoshifumi, Yorino, Naoto, Zenitani, Hiroshi, Mattausch, Hans Jurgen, Miura-Mattausch, Mitiko
Published in 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) (01.02.2017)
Published in 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) (01.02.2017)
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Conference Proceeding