Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs
Zeng, Changkun, Xu, Weizong, Xia, Yuanyang, Pan, Danfeng, Wang, Yiwang, Wang, Qiang, Zhu, Youhua, Ren, Fangfang, Zhou, Dong, Ye, Jiandong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai
Published in Applied physics express (01.12.2019)
Published in Applied physics express (01.12.2019)
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Journal Article
Improved LPCVD-SiNx/AlGaN/GaN MIS-HEMTs by using in-situ MOCVD-SiNx as an interface sacrificial layer
Guo, Hui, Shao, Pengfei, Zeng, Changkun, Bai, Haineng, Wang, Rui, Pan, Danfeng, Chen, Peng, Chen, Dunjun, Lu, Hai, Zhang, Rong, Zheng, Youdou
Published in Applied surface science (15.07.2022)
Published in Applied surface science (15.07.2022)
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Journal Article
Normally-off GaN HEMTs with InGaN p-gate cap layer formed by polarization doping
Zeng, Changkun, Xu, Weizong, Xia, Yuanyang, Wang, Ke, Ren, Fangfang, Zhou, Dong, Li, Yiheng, Zhu, Tinggang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai
Published in Applied physics express (01.01.2022)
Published in Applied physics express (01.01.2022)
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Journal Article
Gallium nitride device
ZENG CHANGKUN, FENG JIAJU, DA YIMENG, YANG QUNSI, SUN TAO, ZHANG SHUAI
Year of Publication 19.07.2024
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Year of Publication 19.07.2024
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