Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure
Shalygin, V. A., Moldavskaya, M. D., Vinnichenko, M. Ya, Maremyanin, K. V., Artemyev, A. A., Panevin, V. Yu, Vorobjev, L. E., Firsov, D. A., Korotyeyev, V. V., Sakharov, A. V., Zavarin, E. E., Arteev, D. S., Lundin, W. V., Tsatsulnikov, A. F., Suihkonen, S., Kauppinen, C.
Published in Journal of applied physics (14.11.2019)
Published in Journal of applied physics (14.11.2019)
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Journal Article
Stress Analysis of GaN-Based Heterostructures on Silicon Substrates
Arteev, D. S., Sakharov, A. V., Zavarin, E. E., Nikolaev, A. E., Yagovkina, M. A., Tsatsulnikov, A. F.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2024)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2024)
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Journal Article
Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells
Bolshakov, A. S., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F., Yagovkina, M. A.
Published in Journal of applied physics (07.04.2017)
Published in Journal of applied physics (07.04.2017)
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Journal Article
AlGaN HEMT Structures Grown on Miscut Si(111) Wafers
Sakharov, Alexei V, Arteev, Dmitri S, Zavarin, Evgenii E, Nikolaev, Andrey E, Lundin, Wsevolod V, Prasolov, Nikita D, Yagovkina, Maria A, Tsatsulnikov, Andrey F, Fedotov, Sergey D, Sokolov, Evgenii M, Statsenko, Vladimir N
Published in Materials (01.06.2023)
Published in Materials (01.06.2023)
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Journal Article
Determination of hole diffusion length in n-GaN
Arteev, D S, Sakharov, A V, Nikolaev, A E, Zavarin, E E, Lundin, W V, Tsatsulnikov, A F
Published in Journal of physics. Conference series (01.12.2021)
Published in Journal of physics. Conference series (01.12.2021)
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Journal Article
A GaN/AlGaN Resonance Bragg Structure
Ivanov, A. A., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F.
Published in Bulletin of the Russian Academy of Sciences. Physics (01.06.2023)
Published in Bulletin of the Russian Academy of Sciences. Physics (01.06.2023)
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Journal Article
Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data
Davydov, Yu V, Roginskii, E M, Kitaev, Yu E, Smirnov, A N, Eliseyev, I A, Rodin, S N, Zavarin, E E, Lundin, W V, Nechaev, D V, Jmerik, V N, Smirnov, M B
Published in Journal of physics. Conference series (01.11.2021)
Published in Journal of physics. Conference series (01.11.2021)
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Journal Article
Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors
Arteev, D S, Sakharov, A V, Lundin, W V, Zavarin, E E, Zakheim, D A, Tsatsulnikov, A F, Gindina, M I, Brunkov, P N
Published in Journal of physics. Conference series (01.12.2020)
Published in Journal of physics. Conference series (01.12.2020)
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Journal Article
Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation
Arteev, D S, Sakharov, A V, Lundin, W V, Zakheim, D A, Zavarin, E E, Tsatsulnikov, A F
Published in Journal of physics. Conference series (01.11.2019)
Published in Journal of physics. Conference series (01.11.2019)
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Journal Article
Investigation of Statistical Broadening in InGaN Alloys
Arteev, D S, Sakharov, A V, Zavarin, E E, Lundin, W V, Smirnov, A N, Davydov, V Yu, Yagovkina, M A, Usov, S O, Tsatsulnikov, A F
Published in Journal of physics. Conference series (01.12.2018)
Published in Journal of physics. Conference series (01.12.2018)
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Journal Article
The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE
Sakharov, A. V., Lundin, W. V., Zavarin, E. E., Usov, S. O., Brunkov, P. N., Tsatsulnikov, A. F.
Published in Technical physics letters (01.12.2020)
Published in Technical physics letters (01.12.2020)
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Journal Article
Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts
Karpov, S Y, Zakheim, D A, Lundin, W V, Sakharov, A V, Zavarin, E E, Brunkov, P N, Lundina, E Y, Tsatsulnikov, A F
Published in Semiconductor science and technology (23.01.2018)
Published in Semiconductor science and technology (23.01.2018)
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Journal Article
Phonons in short-period (GaN)m(AlN)n superlattices: ab initio calculations and group-theoretical analysis of modes and their genesis
Davydov, V Yu, Roginskii, E M, Kitaev, Yu E, Smirnov, A N, Eliseyev, I A, Nechaev, D V, Jmerik, V N, Zavarin, E E, Lundin, W V
Published in Journal of physics. Conference series (01.11.2019)
Published in Journal of physics. Conference series (01.11.2019)
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Journal Article
Proton irradiation effects on GaN-based epitaxial structures
Lebedev, A A, Davydov, V Yu, Smirnov, A N, Eliseyev, I A, Davydovskaya, K S, Zavarin, E E, Zakheim, D A, Lundin, W V, Nikolaev, A E, Sakharov, A V, Tsatsulnikov, A F, Zubov, A V, Kozlovski, V V
Published in Journal of physics. Conference series (01.12.2020)
Published in Journal of physics. Conference series (01.12.2020)
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Journal Article