Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter
Golikov, O. L., Zabavichev, I. Yu, Ivanov, A. S., Obolensky, S. V., Obolenskaya, E. S., Paveliev, D. G., Potekhin, A. A., Puzanov, A. S., Tarasova, E. A., Khazanova, S. V.
Published in Russian microelectronics (01.02.2024)
Published in Russian microelectronics (01.02.2024)
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Calculating Current–Voltage Characteristics with Negative Differential Conductivity Sections of Superlattices Based on a GaAs/AlAs Compound with Different Numbers of Periods
Khazanova, S. V., Golikov, O. L., Puzanov, A. S., Tarasova, E. A., Zabavichev, I. Yu, Potekhin, A. A., Obolenskaya, E. S., Ivanov, A. S., Paveliev, D. G., Obolensky, S. V.
Published in Bulletin of the Russian Academy of Sciences. Physics (01.06.2023)
Published in Bulletin of the Russian Academy of Sciences. Physics (01.06.2023)
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Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure
Zabavichev, I. Yu, Potehin, A. A., Puzanov, A. S., Obolenskiy, S. V., Kozlov, V. A.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2019)
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Modeling the Response of a Microwave Low-Barrier Uncooled Mott Diode to the Action of Heavy Ions of Outer Space and Femtosecond Laser Pulses
Puzanov, A. S., Bibikova, V. V., Zabavichev, I. Yu, Obolenskaya, E. S., Potekhin, A. A., Tarasova, E. A., Vostokov, N. V., Kozlov, V. A., Obolensky, S. V.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2021)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2021)
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Simulation of the Response of a Low-Barrier Mott Diode to the Influence of Heavy Charged Particles from Outer Space
Puzanov, A. S., Bibikova, V. V., Zabavichev, I. Yu, Obolenskaya, E. S., Tarasova, E. A., Vostokov, N. V., Obolenskii, S. V.
Published in Technical physics letters (01.04.2021)
Published in Technical physics letters (01.04.2021)
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Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons
Zabavichev, I. Yu, Potekhin, A. A., Puzanov, A. S., Obolenskiy, S. V., Kozlov, V. A.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2017)
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Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects
Zabavichev, I. Yu, Obolenskaya, E. S., Potekhin, A. A., Puzanov, A. S., Obolensky, S. V., Kozlov, V. A.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2017)
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