Electrical Behavior of Phase-Change Memory Cells Based on GeTe
Perniola, Luca, Sousa, Veronique, Fantini, Andrea, Arbaoui, Edrisse, Bastard, Audrey, Armand, Marilyn, Fargeix, Alain, Jahan, Carine, Nodin, Jean-Francois, Persico, Alain, Blachier, Denis, Toffoli, Alain, Loubriat, Sebastien, Gourvest, Emanuel, Betti Beneventi, Giovanni, Feldis, Helene, Maitrejean, Sylvain, Lhostis, Sandrine, Roule, Anne, Cueto, Olga, Reimbold, Gilles, Poupinet, Ludovic, Billon, Thierry, De Salvo, Barbara, Bensahel, Daniel, Mazoyer, Pascale, Annunziata, Roberto, Zuliani, Paola, Boulanger, Fabien
Published in IEEE electron device letters (01.05.2010)
Published in IEEE electron device letters (01.05.2010)
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Health professionals who have worked in COVID-19 immunization centers suffer the effects of violence
Brunelli, Laura, Scarpis, Enrico, Lo Presti, Tancredi, Fiorillo, Francesca, Campanella, Fabio, Zuliani, Paola, Farneti, Federico, Croci, Eleonora, Pellizzari, Barbara, Cocconi, Roberto, Arnoldo, Luca
Published in Frontiers in public health (20.09.2023)
Published in Frontiers in public health (20.09.2023)
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Phase-change memory: A continuous multilevel compact model of subthreshold conduction and threshold switching
Pigot, Corentin, Gilibert, Fabien, Reyboz, Marina, Bocquet, Marc, Zuliani, Paola, Portal, Jean-Michel
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Phase change memory for automotive grade embedded NVM applications
Cappelletti, Paolo, Annunziata, Roberto, Arnaud, Franck, Disegni, Fabio, Maurelli, Alfonso, Zuliani, Paola
Published in Journal of physics. D, Applied physics (06.05.2020)
Published in Journal of physics. D, Applied physics (06.05.2020)
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Journal Article
Forming operation in Ge-rich GexSbyTez phase change memories
Palumbo, Elisabetta, Zuliani, Paola, Borghi, Massimo, Annunziata, Roberto
Published in Solid-state electronics (01.07.2017)
Published in Solid-state electronics (01.07.2017)
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Journal Article
Overcoming Temperature Limitations in Phase Change Memories With Optimized GexSbyTez
ZULIANI, Paola, VARESI, Enrico, RAVAZZI, Leonardo, ANNUNZIATA, Roberto, PALUMBO, Elisabetta, BORGHI, Massimo, TORTORELLI, Innocenzo, ERBETTA, Davide, LIBERA, Giovanna Dalla, PESSINA, Nicola, GANDOLFO, Anna, PRELINI, Carlo
Published in IEEE transactions on electron devices (01.12.2013)
Published in IEEE transactions on electron devices (01.12.2013)
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Journal Article
Modeling Resistance Instabilities of Set and Reset States in Phase Change Memory With Ge-Rich GeSbTe
Ciocchini, Nicola, Palumbo, Elisabetta, Borghi, Massimo, Zuliani, Paola, Annunziata, Roberto, Ielmini, Daniele
Published in IEEE transactions on electron devices (01.06.2014)
Published in IEEE transactions on electron devices (01.06.2014)
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Journal Article
Forming operation in Ge-rich Ge x Sb y Te z phase change memories
Palumbo, Elisabetta, Zuliani, Paola, Borghi, Massimo, Annunziata, Roberto
Published in Solid-state electronics (01.07.2017)
Published in Solid-state electronics (01.07.2017)
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Journal Article
Comprehensive Phase-Change Memory Compact Model for Circuit Simulation
Pigot, Corentin, Bocquet, Marc, Gilibert, Fabien, Reyboz, Marina, Cueto, Olga, Marca, Vincenzo Della, Zuliani, Paola, Portal, Jean-Michel
Published in IEEE transactions on electron devices (01.10.2018)
Published in IEEE transactions on electron devices (01.10.2018)
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Journal Article
Overcoming Temperature Limitations in Phase Change Memories With Optimized
Zuliani, Paola, Varesi, Enrico, Palumbo, Elisabetta, Borghi, Massimo, Tortorelli, Innocenzo, Erbetta, Davide, Dalla Libera, Giovanna, Pessina, Nicola, Gandolfo, Anna, Prelini, Carlo, Ravazzi, Leonardo, Annunziata, Roberto
Published in IEEE transactions on electron devices (01.12.2013)
Published in IEEE transactions on electron devices (01.12.2013)
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Journal Article
A 4 Mb LV MOS-Selected Embedded Phase Change Memory in 90 nm Standard CMOS Technology
De Sandre, G, Bettini, L, Pirola, A, Marmonier, L, Pasotti, M, Borghi, M, Mattavelli, P, Zuliani, P, Scotti, L, Mastracchio, G, Bedeschi, F, Gastaldi, R, Bez, R
Published in IEEE journal of solid-state circuits (01.01.2011)
Published in IEEE journal of solid-state circuits (01.01.2011)
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Journal Article
Conference Proceeding
A 90nm 4Mb embedded phase-change memory with 1.2V 12ns read access time and 1MB/s write throughput
De Sandre, G., Bettini, L., Pirola, A., Marmonier, L., Pasotti, M., Borghi, M., Mattavelli, P., Zuliani, P., Scotti, L., Mastracchio, G., Bedeschi, F., Gastaldi, R., Bez, R.
Published in 2010 IEEE International Solid-State Circuits Conference - (ISSCC) (01.02.2010)
Published in 2010 IEEE International Solid-State Circuits Conference - (ISSCC) (01.02.2010)
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Conference Proceeding