Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate
Xia, Yuanyang, Zhu, Youhua, Liu, Chunhua, Wei, Hongyuan, Zhang, Tingting, Lee, Yeeheng, Zhu, Tinggang, wang, Meiyu, Yi, Li, Ge, Mei
Published in Materials research express (01.06.2020)
Published in Materials research express (01.06.2020)
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Journal Article
A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure
Xu, Ru, Chen, Peng, Liu, Xiancheng, Zhao, Jianguo, Zhu, Tinggang, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Xiu, Xiangqian, Wan, Fayu, Chang, Jianhua, Zhang, Rong, Zheng, Youdou
Published in Chip (Hong Kong) (01.03.2024)
Published in Chip (Hong Kong) (01.03.2024)
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Journal Article
High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics
Zhou, Feng, Xu, Weizong, Ren, Fangfang, Zhou, Dong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Zhu, Tinggang, Lu, Hai
Published in IEEE electron device letters (01.07.2021)
Published in IEEE electron device letters (01.07.2021)
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Journal Article
1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability
Zhou, Feng, Xu, Weizong, Ren, Fangfang, Xia, Yuanyang, Wu, Leke, Zhu, Tinggang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai
Published in IEEE transactions on power electronics (01.01.2022)
Published in IEEE transactions on power electronics (01.01.2022)
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Journal Article
Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode With 600-V/10-A Switching Capability
Zhou, Feng, Xu, Weizong, Ren, Fangfang, Zhou, Dong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Zhu, Tinggang, Lu, Hai
Published in IEEE transactions on power electronics (01.11.2021)
Published in IEEE transactions on power electronics (01.11.2021)
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Journal Article
Irradiation Hardened p-GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV⋅cm2/mg and 95% Conversion Efficiency at 300 W/500 kHz
Zhou, Feng, Zou, Can, Zhou, Tianyang, Xu, Weizong, Ren, Fangfang, Zhou, Dong, Wang, Yiwang, Chen, Dunjun, Xia, Yuanyang, Wu, Leke, Li, Yiheng, Zhu, Tinggang, Zheng, Youdou, Zhang, Rong, Lu, Hai
Published in IEEE electron device letters (01.06.2024)
Published in IEEE electron device letters (01.06.2024)
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Journal Article
Irradiation Hardened p -GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV⋅cm 2 /mg and 95% Conversion Efficiency at 300 W/500 kHz
Zhou, Feng, Zou, Can, Zhou, Tianyang, Xu, Weizong, Ren, Fangfang, Zhou, Dong, Wang, Yiwang, Chen, Dunjun, Xia, Yuanyang, Wu, Leke, Li, Yiheng, Zhu, Tinggang, Zheng, Youdou, Zhang, Rong, Lu, Hai
Published in IEEE electron device letters (01.06.2024)
Published in IEEE electron device letters (01.06.2024)
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Journal Article
High-VTH E-Mode GaN HEMTs With Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped p-GaN Engineering
Jin, Yulei, Zhou, Feng, Xu, Weizong, Wang, Zhengpeng, Zhou, Tianyang, Zhou, Dong, Ren, Fangfang, Xia, Yuanyang, Wu, Leke, Li, Yiheng, Zhu, Tinggang, Chen, Dunjun, Zhang, Rong, Ye, Jiandong, Zheng, Youdou, Lu, Hai
Published in IEEE transactions on electron devices (01.11.2023)
Published in IEEE transactions on electron devices (01.11.2023)
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Journal Article
High- V TH E-Mode GaN HEMTs With Robust Gate-Bias-Dependent V TH Stability Enabled by Mg-Doped p-GaN Engineering
Jin, Yulei, Zhou, Feng, Xu, Weizong, Wang, Zhengpeng, Zhou, Tianyang, Zhou, Dong, Ren, Fangfang, Xia, Yuanyang, Wu, Leke, Li, Yiheng, Zhu, Tinggang, Chen, Dunjun, Zhang, Rong, Ye, Jiandong, Zheng, Youdou, Lu, Hai
Published in IEEE transactions on electron devices (01.11.2023)
Published in IEEE transactions on electron devices (01.11.2023)
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Journal Article
High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing
Xu, Ru, Chen, Peng, Zhou, Jing, Li, Yimeng, Li, Yuyin, Zhu, Tinggang, Cheng, Kai, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Liu, Bin, Xiu, Xiangqian, Han, Ping, Shi, Yi, Zhang, Rong, Zheng, Youdou
Published in Small (Weinheim an der Bergstrasse, Germany) (01.09.2022)
Published in Small (Weinheim an der Bergstrasse, Germany) (01.09.2022)
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Journal Article
High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing (Small 37/2022)
Xu, Ru, Chen, Peng, Zhou, Jing, Li, Yimeng, Li, Yuyin, Zhu, Tinggang, Cheng, Kai, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Liu, Bin, Xiu, Xiangqian, Han, Ping, Shi, Yi, Zhang, Rong, Zheng, Youdou
Published in Small (Weinheim an der Bergstrasse, Germany) (15.09.2022)
Published in Small (Weinheim an der Bergstrasse, Germany) (15.09.2022)
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Journal Article
Normally-off GaN HEMTs with InGaN p-gate cap layer formed by polarization doping
Zeng, Changkun, Xu, Weizong, Xia, Yuanyang, Wang, Ke, Ren, Fangfang, Zhou, Dong, Li, Yiheng, Zhu, Tinggang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai
Published in Applied physics express (01.01.2022)
Published in Applied physics express (01.01.2022)
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Journal Article
High Performance Quasi-Vertical GaN Junction Barrier Schottky Diode with Zero Reverse Recovery and Rugged Avalanche Capability
Zhou, Feng, Xu, Weizong, Ren, Fangfang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Zhu, Tinggang, Lu, Hai
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30.05.2021)
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30.05.2021)
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Conference Proceeding
3.0-V-Threshold-Voltage p-GaN HEMTs with Low-Loss Reverse Conduction capability
Zhou, Feng, Xu, Weizong, Jin, Yulei, Zhou, Tianyang, Ren, Fangfang, Zhou, Dong, Xia, Yuanyang, Wu, Leke, Li, Yiheng, Zhu, Tinggang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
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Conference Proceeding
Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness
Zhou, Tianyang, Zhou, Feng, Chen, Quanyou, Lyu, Xiaofeng, Xu, Weizong, Zhou, Dong, Ren, Fangfang, Chen, Dunjun, Xia, Yuanyang, Wu, Leke, Wang, Ke, Li, Yiheng, Zhu, Tinggang, Zhang, Rong, Zheng, Youdou, Lu, Hai
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
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Conference Proceeding
Integrated GaN MIS-HEMT with Multi-Channel Heterojunction SBD Structures
Li, Sheng, Liu, Siyang, Zhang, Chi, Wei, Jiaxing, Zhang, Long, Sun, Weifeng, Zhu, Youhua, Zhang, Tingting, Wang, Dongsheng, Sun, Yinxia, Li, Yiheng, Zhu, Tinggang
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
1200V E-mode GaN Monolithic Integration Platform on Sapphire with Ultra-thin Buffer Technology
Li, Sheng, Ma, Yanfeng, Lu, Weihao, Li, Mingfei, Wang, Lixi, Zhang, Zikang, Zhu, Tinggang, Li, Yiheng, Wei, Jiaxing, Zhang, Long, Liu, Siyang, Sun, Weifeng
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
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Conference Proceeding
Superior Performances of Dynamic On-State Resistance in 1.9kV GaN-on-Sapphire HEMT
Lu, Weihao, Li, Sheng, Liu, Siyang, Ma, Yanfeng, Zhang, Long, Wei, Jiaxing, Sun, Weifeng, Li, Yiheng, Xia, Yuanyang, Wang, Ke, Zhu, Tinggang
Published in 2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) (27.10.2023)
Published in 2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) (27.10.2023)
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Conference Proceeding